dc.contributor.author | Yu, Bo | |
dc.contributor.author | Liu, Weishu | |
dc.contributor.author | Chen, Shuo | |
dc.contributor.author | Wang, Hui | |
dc.contributor.author | Wang, Hengzhi | |
dc.contributor.author | Chen, Gang | |
dc.contributor.author | Ren, Zhifeng | |
dc.date.accessioned | 2017-07-10T14:30:57Z | |
dc.date.available | 2017-07-10T14:30:57Z | |
dc.date.issued | 2012-03 | |
dc.date.submitted | 2012-02 | |
dc.identifier.issn | 22112855 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/110574 | |
dc.description.abstract | Thermoelectric figure-of-merit (ZT) of ∼1.6 at 700 °C is achieved in β-phase copper selenide (Cu2Se) made by ball milling and hot pressing. The β-phase of such material possesses a natural superlattice-like structure that combines ordered selenium (Se) and disordered copper (Cu) layers in its unit cell, resulting in a low lattice thermal conductivity of 0.4–0.5 W m−1 K−1. A λ-shaped specific heat peak indicates a phase transition from cubic β-phase to tetragonal α-phase at around 140 °C upon cooling and vice versa. An abnormal decrease in specific heat with increasing temperature was also observed due to the increased random motion of disordered Cu atoms. These features indicate that β-phase Cu[subscript 2]Se could be potentially an interesting thermoelectric material, competing with other conventional thermoelectric materials. | en_US |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1016/j.nanoen.2012.02.010 | en_US |
dc.rights | Creative Commons Attribution-NonCommercial-NoDerivs License | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | en_US |
dc.source | Prof. Gang Chen | en_US |
dc.title | Thermoelectric properties of copper selenide with ordered selenium layer and disordered copper layer | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Yu, Bo, Weishu Liu, Shuo Chen, Hui Wang, Hengzhi Wang, Gang Chen, and Zhifeng Ren. “Thermoelectric Properties of Copper Selenide with Ordered Selenium Layer and Disordered Copper Layer.” Nano Energy 1, no. 3 (May 2012): 472–478. doi:10.1016/j.nanoen.2012.02.010. | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Mechanical Engineering | en_US |
dc.contributor.approver | Chen, Gang | en_US |
dc.contributor.mitauthor | Yu, Bo | |
dc.contributor.mitauthor | Chen, Shuo | |
dc.contributor.mitauthor | Chen, Gang | |
dc.relation.journal | Nano Energy | en_US |
dc.eprint.version | Author's final manuscript | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Yu, Bo; Liu, Weishu; Chen, Shuo; Wang, Hui; Wang, Hengzhi; Chen, Gang; Ren, Zhifeng | en_US |
dspace.embargo.terms | N | en_US |
dc.identifier.orcid | https://orcid.org/0000-0002-3968-8530 | |
mit.license | PUBLISHER_CC | en_US |