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dc.contributor.authorCampos, Leonardo C.
dc.contributor.authorTaychatanapat, Thiti
dc.contributor.authorSerbyn, Maksym
dc.contributor.authorSurakitbovorn, Kawin
dc.contributor.authorWatanabe, Kenji
dc.contributor.authorTaniguchi, Takashi
dc.contributor.authorAbanin, Dmitry A.
dc.contributor.authorJarillo-Herrero, Pablo
dc.date.accessioned2017-07-11T18:02:22Z
dc.date.available2017-07-11T18:02:22Z
dc.date.issued2016-08
dc.date.submitted2016-04
dc.identifier.issn0031-9007
dc.identifier.issn1079-7114
dc.identifier.urihttp://hdl.handle.net/1721.1/110642
dc.description.abstractWe report on magnetotransport studies of dual-gated, Bernal-stacked trilayer graphene (TLG) encapsulated in boron nitride crystals. We observe a quantum Hall effect staircase which indicates a complete lifting of the 12-fold degeneracy of the zeroth Landau level. As a function of perpendicular electric field, our data exhibit a sequence of phase transitions between all integer quantum Hall states in the filling factor interval -8<ν<0. We develop a theoretical model and argue that, in contrast to monolayer and bilayer graphene, the observed Landau level splittings and quantum Hall phase transitions can be understood within a single-particle picture, but imply the presence of a charge density imbalance between the inner and outer layers of TLG, even at charge neutrality and zero transverse electric field. Our results indicate the importance of a previously unaccounted band structure parameter which, together with a more accurate estimate of the other tight-binding parameters, results in a significantly improved determination of the electronic and Landau level structure of TLG.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (DMR-1405221)en_US
dc.description.sponsorshipUnited States. Office of Naval Research (N00014-13-1-0610)en_US
dc.description.sponsorshipGordon and Betty Moore Foundation (GBMF4307)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (DMR-0819762)en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.117.066601en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleLandau Level Splittings, Phase Transitions, and Nonuniform Charge Distribution in Trilayer Grapheneen_US
dc.typeArticleen_US
dc.identifier.citationCampos, Leonardo C.; Taychatanapat, Thiti; Serbyn, Maksym et al." Landau Level Splittings, Phase Transitions, and Nonuniform Charge Distribution in Trilayer Graphene." Physical Review Letters 117, 066601 (August 2016): 1-5 © 2016 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorSerbyn, Maksym
dc.relation.journalPhysical Review Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2016-08-01T22:00:09Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsCampos, Leonardo C.; Taychatanapat, Thiti; Serbyn, Maksym; Surakitbovorn, Kawin; Watanabe, Kenji; Taniguchi, Takashi; Abanin, Dmitry A.; Jarillo-Herrero, Pabloen_US
dspace.embargo.termsNen_US
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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