Serially connected monolayer MoS FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography
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We demonstrate sub-10 nm transistor channel lengths by directed self-assembly patterning of monolayer MoS[subscript 2] in a periodic chain of homojunction semiconducting-(2H) and metallic-phase (1T') MoS[subscript 2] regions with half-pitch of 7.5 nm. The MoS[subscript 2] composite transistor possesses an off-state current of 100 pA/μm and an I[subscript
on]/I[subscript off] ratio in excess of 10[subscript 5]. Modeling of the resulting current-voltage characteristics reveals that the 2H/1T' MoS[subscript 2] homojunction has a resistance of 75 Ω.μm while the 2H-MoS[subscript 2] exhibits low-field mobility of ~8 cm[superscript 2]/V.s and carrier injection velocity of ~10[superscript 6] cm/s.
Date issued
2016-09Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories; Massachusetts Institute of Technology. Plasma Science and Fusion Center; Massachusetts Institute of Technology. Research Laboratory of ElectronicsJournal
2016 IEEE Symposium on VLSI Technology
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Nourbakhsh, A. et al. “Serially Connected Monolayer MoS2 FETs with Channel Patterned by a 7.5 Nm Resolution Directed Self-Assembly Lithography.” 2016 IEEE Symposium on VLSI Technology, Honolulu, HI, USA, 14-16 June, 2016. IEEE, 2016. 1–2.
Version: Author's final manuscript
ISBN
978-1-5090-0638-0