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dc.contributor.authorAnand, Lallit
dc.contributor.authorDi Leo, Claudio V
dc.contributor.authorRejovitzky, Elisha
dc.date.accessioned2017-08-17T17:41:35Z
dc.date.available2017-08-17T17:41:35Z
dc.date.issued2015-04
dc.date.submitted2015-04
dc.identifier.issn0020-7683
dc.identifier.urihttp://hdl.handle.net/1721.1/110969
dc.description.abstractAmorphous silicon (a-Si) is a promising material for anodes in Li-ion batteries due to its increased capacity relative to the current generation of graphite-based anode materials. However, the intercalation of lithium into a-Si induces very large elastic–plastic deformations, including volume changes of approximately 300%. We have formulated and numerically implemented a fully-coupled diffusion–deformation theory, which accounts for transient diffusion of lithium and accompanying large elastic–plastic deformations. The material parameters in the theory have been calibrated to experiments of galvanostatic cycling of a half-cell composed of an a-Si thin-film anode deposited on a quartz substrate, which have been reported in the literature. We show that our calibrated theory satisfactorily reproduces the mechanical response of such an anode — as measured by the changes in curvature of the substrate, as well as the electrochemical response — as measured by the voltage versus state-of-charge (SOC) response. We have applied our numerical simulation capability to model galvanostatic charging of hollow a-Si nanotubes whose exterior walls have been oxidized to prevent outward expansion; such anodes have been recently experimentally-realized in the literature. We show that the results from our numerical simulations are in good agreement with the experimentally-measured voltage versus SOC behavior at various charging rates (C-rates). Through our simulations, we have identified two major effects of plasticity on the electrochemical performance of a-Si anodes: • First, for a given voltage cut-off, plasticity enables lithiation of the anode to a higher SOC. This is because plastic flow reduces the stresses generated in the material, and thus reduces the potential required to lithiate the material. • Second, plastic deformation accounts for a significant percentage of the energy dissipated during the cycling of the anode at low C-rates. Hence, plasticity can have either (a) a beneficial effect, that is, a higher SOC for a given voltage cut-off; or (b) a detrimental effect, that is significant energy dissipation at low C-rates.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) Division of Civil, Mechanical and Manufacturing Innovation (Award CMMI-1063626)en_US
dc.language.isoen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.ijsolstr.2015.04.028en_US
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivs Licenseen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en_US
dc.sourceProf. Anand via Angie Locknaren_US
dc.titleDiffusion–deformation theory for amorphous silicon anodes: The role of plastic deformation on electrochemical performanceen_US
dc.typeArticleen_US
dc.identifier.citationDi Leo, Claudio V. et al. “Diffusion–deformation Theory for Amorphous Silicon Anodes: The Role of Plastic Deformation on Electrochemical Performance.” International Journal of Solids and Structures 67–68 (August 2015): 283–296 © 2015 Elsevier Ltden_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.mitauthorAnand, Lallit
dc.contributor.mitauthorDi Leo, Claudio V
dc.contributor.mitauthorRejovitzky, Elisha
dc.relation.journalInternational Journal of Solids and Structuresen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsDi Leo, Claudio V.; Rejovitzky, Elisha; Anand, Lalliten_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-4581-7888
dc.identifier.orcidhttps://orcid.org/0000-0002-1512-7173
mit.licensePUBLISHER_CCen_US


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