Bright and photostable single-photon emitter in silicon carbide
Author(s)
Tran, Toan Trong; Aharonovich, Igor; Lienhard, Benjamin; Schroder, Tim; Mouradian, Sara L; Dolde, Florian; Englund, Dirk R.; ... Show more Show less
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Alternative title
Bright and photostable single-photon emitter in silicon carbide
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Show full item recordAbstract
Single-photon sources are of paramount importance in quantum communication, quantum computation, and quantum metrology. In particular, there is great interest in realizing scalable solid-state platforms that can emit triggered photons on demand to achieve scalable nanophotonic networks. We report on a visible-spectrum single-photon emitter in 4H silicon carbide (SiC). The emitter is photostable at room and low temperatures, enabling photon counts per second in excess of 2×10⁶ from unpatterned bulk SiC. It exists in two orthogonally polarized states, which have parallel absorption and emission dipole orientations. Low-temperature measurements reveal a narrow zero phonon line (linewidth <0.1 nm) that accounts for >30% of the total photoluminescence spectrum.
Date issued
2016-07Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Research Laboratory of ElectronicsJournal
Optica
Publisher
Optical Society of America
Citation
Lienhard, Benjamin et al. “Bright and Photostable Single-Photon Emitter in Silicon Carbide.” Optica 3, 7 (July 13, 2016): 768-774 © 2016 Optical Society of America
Version: Original manuscript
ISSN
2334-2536