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dc.contributor.authorZhao, Youyang
dc.contributor.authorRinzler, Charles Cooper
dc.contributor.authorAllanore, Antoine
dc.date.accessioned2017-09-27T17:55:29Z
dc.date.available2017-09-27T17:55:29Z
dc.date.issued2016-12
dc.date.submitted2016-10
dc.identifier.issn2162-8769
dc.identifier.issn2162-8777
dc.identifier.urihttp://hdl.handle.net/1721.1/111652
dc.description.abstractHigh temperature (> 900 degrees C) industrial waste heat recovery remains a key challenge for thermoelectric materials. The unique combination of high temperature, low heat-flux, and large surface area of waste heat generation as analyzed herein shows that active materials cost is the main metric inhibiting application. Molten compounds with semiconducting properties are therefore proposed as a cost-effective addition to solid-state materials for these conditions. A review of prior experimental results is presented, after which we demonstrate the performance of a laboratory-scale device based on molten SnS. The results allow reporting, for the first time, the Figure of Merit (ZT) and the conversion efficiency of the candidate materials. In addition, the Seebeck coefficient of molten SnS is reported. The results confirm the opportunity offered by molten thermoelectric compounds and allow discussion of the remaining materials and engineering challenges that need to be tackled in order to envision the future deployment of thermoelectric devices based on molten semiconductors.en_US
dc.publisherElectrochemical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1149/2.0031703JSSen_US
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivs Licenseen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en_US
dc.sourceThe Electrochemical Society (ECS)en_US
dc.titleMolten Semiconductors for High Temperature Thermoelectricityen_US
dc.typeArticleen_US
dc.identifier.citationZhao, Youyang et al. “Molten Semiconductors for High Temperature Thermoelectricity.” ECS Journal of Solid State Science and Technology 6, 3 (December 5, 2016): N3010–N3016. © 2016 The Author(s)en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.mitauthorZhao, Youyang
dc.contributor.mitauthorRinzler, Charles Cooper
dc.contributor.mitauthorAllanore, Antoine
dc.relation.journalECS Journal of Solid State Science and Technologyen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2017-09-27T15:58:37Z
dspace.orderedauthorsZhao, Youyang; Rinzler, Charles; Allanore, Antoineen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-2740-9549
dc.identifier.orcidhttps://orcid.org/0000-0002-4628-3937
dc.identifier.orcidhttps://orcid.org/0000-0002-2594-0264
mit.licensePUBLISHER_CCen_US


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