Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells
Author(s)Park, Helen Hejin; Heasley, Rachel; Sun, Leizhi; Sinsermsuksakul, Prasert; Chua, Danny; Gordon, Roy G.; Steinmann, Vera; Jaramillo, Rafael; Hartman, Katherine; Chakraborty, Rupak; Buonassisi, Anthony; ... Show more Show less
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Thin-film solar cells consisting of earth-abundant and non-toxic materials were made from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were studied for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post-deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved.
DepartmentMassachusetts Institute of Technology. Department of Mechanical Engineering
Progress in Photovoltaics: Research and Applications
Park, Helen Hejin et al. “Co-Optimization of SnS Absorber and Zn(O,S) Buffer Materials for Improved Solar Cells.” Progress in Photovoltaics: Research and Applications 23, 7 (May 2014): 901–908 © 2014 John Wiley & Sons, Ltd
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