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Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells

Author(s)
Park, Helen Hejin; Heasley, Rachel; Sun, Leizhi; Sinsermsuksakul, Prasert; Chua, Danny; Gordon, Roy G.; Steinmann, Vera; Jaramillo, Rafael; Hartman, Katherine; Chakraborty, Rupak; Buonassisi, Anthony; ... Show more Show less
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Abstract
Thin-film solar cells consisting of earth-abundant and non-toxic materials were made from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were studied for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post-deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved.
Date issued
2015-06
URI
http://hdl.handle.net/1721.1/112121
Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Journal
Progress in Photovoltaics: Research and Applications
Publisher
Wiley-Blackwell
Citation
Park, Helen Hejin et al. “Co-Optimization of SnS Absorber and Zn(O,S) Buffer Materials for Improved Solar Cells.” Progress in Photovoltaics: Research and Applications 23, 7 (May 2014): 901–908 © 2014 John Wiley & Sons, Ltd
Version: Author's final manuscript
ISSN
1062-7995
1099-159X

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