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dc.contributor.authorChen, Jingsheng
dc.contributor.authorHo, Pin
dc.contributor.authorZhang, Jinshuo
dc.contributor.authorBono, David C
dc.contributor.authorRoss, Caroline A
dc.date.accessioned2017-11-16T15:41:48Z
dc.date.available2017-11-16T15:41:48Z
dc.date.issued2016-06
dc.date.submitted2016-02
dc.identifier.issn0018-9464
dc.identifier.issn1941-0069
dc.identifier.urihttp://hdl.handle.net/1721.1/112195
dc.description.abstractAn out-of-plane Oersted field produced from a current-carrying Au wire is used to induce local domain formation in wires made from [Co/Pd][subscript 15] multilayers with perpendicular anisotropy. A 100 ns pulsed current of 56-110 mA injected into the Au wire created a reverse domain size of 120-290 nm in a Co/Pd nanowire on one side of the Au wire. A Biot-Savart model was used to estimate the position dependence of the Oersted field around the Au wire. The shape, size, and location of the reversed region of Co/Pd were consistent with the magnitude of the Oersted field and the switching field distribution of the unpatterned film. A current density of 6.2 × 10[superscript 11] Am[superscript -2] in the Co/Pd nanowire did not translate the domain walls due to low spin transfer efficiency, but the Joule heating promoted domain growth in a field below the coercive field.en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Materials Research Science and Engineering Centers (Program) (Award DMR1419807)en_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/TMAG.2016.2526972en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourcearXiven_US
dc.titleOersted Field and Spin Current Effects on Magnetic Domains in [Co/Pd]en_US
dc.typeArticleen_US
dc.identifier.citationHo, Pin, Jinshuo Zhang, David C. Bono, Jingsheng Chen, and Caroline A. Ross. “Oersted Field and Spin Current Effects on Magnetic Domains in [Co/Pd]15Nanowires.” IEEE Transactions on Magnetics 52, no. 6 (June 2016): 1–6 © Institute of Electrical and Electronics Engineers (IEEE)en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.mitauthorHo, Pin
dc.contributor.mitauthorZhang, Jinshuo
dc.contributor.mitauthorBono, David C
dc.contributor.mitauthorRoss, Caroline A
dc.relation.journalIEEE Transactions on Magneticsen_US
dc.eprint.versionOriginal manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dc.date.updated2017-10-17T13:46:09Z
dspace.orderedauthorsHo, Pin; Zhang, Jinshuo; Bono, David C.; Chen, Jingsheng; Ross, Caroline A.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-2399-0823
dc.identifier.orcidhttps://orcid.org/0000-0002-2208-5872
dc.identifier.orcidhttps://orcid.org/0000-0003-2262-1249
mit.licenseOPEN_ACCESS_POLICYen_US
mit.metadata.statusComplete


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