Heteroepitaxial growth of In In[subscript 0.30]Ga[subscript 0.70]As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
Author(s)Kohen, David; Nguyen, Xuan Sang; Yadav, Sachin; Kumar, Annie; Made, Riko I; Heidelberger, Christopher; Gong, Xiao; Lee, Kwang Hong; Lee, Kenneth Eng Kian; Yeo, Yee Chia; Yoon, Soon Fatt; Fitzgerald, Eugene A.; ... Show more Show less
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We report on the growth of an In[subscript 0.30]Ga[subscript 0.70]As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10[superscript 7]cm[subscript -2] with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I[subscript DS] of 70 μA/μm and g[subscript m] of above 60 μS/μm, demonstrating the high quality of the grown materials.
DepartmentLincoln Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering
American Institute of Physics (AIP)
Kohen, David, et al. “Heteroepitaxial Growth of In[subscript 0.30]Ga[subscript 0.70] As High-Electron Mobility Transistor on 200 Mm Silicon Substrate Using Metamorphic Graded Buffer.” AIP Advances, vol. 6, no. 8, Aug. 2016, p. 085106.
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