MIT Libraries homeMIT Libraries logoDSpace@MIT

MIT
View Item 
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Heteroepitaxial growth of In In[subscript 0.30]Ga[subscript 0.70]As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Author(s)
Kohen, David; Nguyen, Xuan Sang; Yadav, Sachin; Kumar, Annie; Made, Riko I; Heidelberger, Christopher; Gong, Xiao; Lee, Kwang Hong; Lee, Kenneth Eng Kian; Yeo, Yee Chia; Yoon, Soon Fatt; Fitzgerald, Eugene A.; ... Show more Show less
Thumbnail
DownloadFitzgerald_Heteroepitaxial growth.pdf (2.151Mb)
PUBLISHER_CC

Publisher with Creative Commons License

Creative Commons Attribution

Terms of use
Creative Commons Attribution 4.0 International License http://creativecommons.org/licenses/by/4.0/
Metadata
Show full item record
Abstract
We report on the growth of an In[subscript 0.30]Ga[subscript 0.70]As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10[superscript 7]cm[subscript -2] with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I[subscript DS] of 70 μA/μm and g[subscript m] of above 60 μS/μm, demonstrating the high quality of the grown materials.
Date issued
2016-08
URI
http://hdl.handle.net/1721.1/112299
Department
Lincoln Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
AIP Advances
Publisher
American Institute of Physics (AIP)
Citation
Kohen, David, et al. “Heteroepitaxial Growth of In[subscript 0.30]Ga[subscript 0.70] As High-Electron Mobility Transistor on 200 Mm Silicon Substrate Using Metamorphic Graded Buffer.” AIP Advances, vol. 6, no. 8, Aug. 2016, p. 085106.
Version: Final published version
ISSN
2158-3226

Collections
  • MIT Open Access Articles

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

My Account

Login

Statistics

OA StatisticsStatistics by CountryStatistics by Department
MIT Libraries homeMIT Libraries logo

Find us on

Twitter Facebook Instagram YouTube RSS

MIT Libraries navigation

SearchHours & locationsBorrow & requestResearch supportAbout us
PrivacyPermissionsAccessibility
MIT
Massachusetts Institute of Technology
Content created by the MIT Libraries, CC BY-NC unless otherwise noted. Notify us about copyright concerns.