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dc.contributor.authorLee, Dongwook
dc.contributor.authorSayed, Sayed Youssef
dc.contributor.authorLee, Sangyeop
dc.contributor.authorKuryak, Chris Adam
dc.contributor.authorZhou, Jiawei
dc.contributor.authorChen, Gang
dc.contributor.authorShao-Horn, Yang
dc.date.accessioned2017-11-29T14:35:12Z
dc.date.available2017-11-29T14:35:12Z
dc.date.issued2016-11
dc.date.submitted2016-09
dc.identifier.issn2040-3364
dc.identifier.issn2040-3372
dc.identifier.urihttp://hdl.handle.net/1721.1/112327
dc.description.abstractPoly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) has high electrical conductivity (∼10³ S cm⁻¹) but it exhibits a low Seebeck coefficient (<15 μV K⁻¹), resulting in a low power factor. Mixing PEDOT:PSS with nanostructured semiconductors can enhance the Seebeck coefficient and achieve an improved thermoelectric power factor. However, underlying mechanisms for those composite thermoelectric systems are scarcely understood so far. In this study, quantitative analyses on the electrical conductivity and Seebeck coefficient for the heterostructures of nanometer-thick PEDOT:PSS on single-crystal Si (001) on sapphire (SOS) are reported. The heterostructures have larger Seebeck coefficients up to 7.3 fold and power factors up to 17.5 fold relative to PEDOT:PSS. The electrical conductivity increased with decreasing combined thicknesses of PEDOT:PSS and Si, and the Seebeck coefficient increased with decreasing PEDOT:PSS thickness, which can be attributed to modulation doping caused by diffusion of holes from PEDOT:PSS into undoped Si. This hypothesis is supported by simulation per band alignment. The valence band offset between Si and PEDOT:PSS dominantly controls the electrical conductivity and Seebeck coefficient of the heterostructures. This study not only suggests mechanistic insights to increase the power factors of PEDOT:PSS-based composites but also opens the door for new strategies to enhance the thermoelectric efficiencies of heterostructured nanocomposite materials.en_US
dc.language.isoen_US
dc.publisherRoyal Society of Chemistryen_US
dc.relation.isversionofhttp://dx.doi.org/10.1039/c6nr06950aen_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceProf. Chen via Angie Locknaren_US
dc.titleQuantitative analyses of enhanced thermoelectric properties of modulation-doped PEDOT:PSS/undoped Si (001) nanoscale heterostructuresen_US
dc.typeArticleen_US
dc.identifier.citationLee, Dongwook, et al. “Quantitative Analyses of Enhanced Thermoelectric Properties of Modulation-Doped PEDOT:PSS/undoped Si (001) Nanoscale Heterostructures.” Nanoscale 8, 47 (November 2016): 19754–19760 © 2016 The Royal Society of Chemistryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.approverChen, Gangen_US
dc.contributor.mitauthorLee, Dongwook
dc.contributor.mitauthorSayed, Sayed Youssef
dc.contributor.mitauthorLee, Sangyeop
dc.contributor.mitauthorKuryak, Chris Adam
dc.contributor.mitauthorZhou, Jiawei
dc.contributor.mitauthorChen, Gang
dc.contributor.mitauthorShao-Horn, Yang
dc.relation.journalNanoscaleen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsLee, Dongwook; Sayed, Sayed Youssef; Lee, Sangyeop; Kuryak, Chris Adam; Zhou, Jiawei; Chen, Gang; Shao-Horn, Yangen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-2805-3353
dc.identifier.orcidhttps://orcid.org/0000-0002-9872-5688
dc.identifier.orcidhttps://orcid.org/0000-0002-3968-8530
mit.licenseOPEN_ACCESS_POLICYen_US
mit.metadata.statusComplete


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