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dc.contributor.authorChan, Ching-Kit
dc.contributor.authorLee, Patrick A
dc.date.accessioned2017-12-01T19:22:36Z
dc.date.available2017-12-01T19:22:36Z
dc.date.issued2017-11
dc.date.submitted2017-10
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.urihttp://hdl.handle.net/1721.1/112343
dc.description.abstractRecent transport experiments have revealed the activation of longitudinal magnetoresistance of Weyl semimetals in the quantum limit, suggesting the breakdown of chiral anomaly in a strong magnetic field. Here we provide a general mechanism for gapping the zeroth chiral Landau levels applicable for both Dirac and Weyl semimetals. Our result shows that the zeroth Landau levels anticross when the magnetic axis is perpendicular to the Dirac/Weyl node separation and when the inverse magnetic length l[subscript B][superscript −1] is comparable to the node separation scale Δk. The induced bulk gap increases rapidly beyond a threshold field in Weyl semimetals, but has no threshold and is nonmonotonic in Dirac systems due to the crossover between l[subscript B][superscript −1] > Δk and l[subscript B][superscript −1] < Δk regions. We also find that the Dirac and possibly Weyl systems host counterpropagating edge states between the zeroth Landau levels, leading to a state with metallic side walls and zero Hall conductance.en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.96.195143en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleEmergence of gapped bulk and metallic side walls in the zeroth Landau level in Dirac and Weyl semimetalsen_US
dc.typeArticleen_US
dc.identifier.citationChan, Ching-Kit, and Patrick A. Lee. “Emergence of Gapped Bulk and Metallic Side Walls in the Zeroth Landau Level in Dirac and Weyl Semimetals.” Physical Review B, vol. 96, no. 19, Nov. 2017. © 2017 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorLee, Patrick A
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2017-11-21T17:59:21Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsChan, Ching-Kit; Lee, Patrick A.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0001-7809-8157
mit.licensePUBLISHER_POLICYen_US


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