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Emergence of gapped bulk and metallic side walls in the zeroth Landau level in Dirac and Weyl semimetals

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Show simple item record Chan, Ching-Kit Lee, Patrick A 2017-12-01T19:22:36Z 2017-12-01T19:22:36Z 2017-11 2017-10
dc.identifier.issn 2469-9950
dc.identifier.issn 2469-9969
dc.description.abstract Recent transport experiments have revealed the activation of longitudinal magnetoresistance of Weyl semimetals in the quantum limit, suggesting the breakdown of chiral anomaly in a strong magnetic field. Here we provide a general mechanism for gapping the zeroth chiral Landau levels applicable for both Dirac and Weyl semimetals. Our result shows that the zeroth Landau levels anticross when the magnetic axis is perpendicular to the Dirac/Weyl node separation and when the inverse magnetic length l[subscript B][superscript −1] is comparable to the node separation scale Δk. The induced bulk gap increases rapidly beyond a threshold field in Weyl semimetals, but has no threshold and is nonmonotonic in Dirac systems due to the crossover between l[subscript B][superscript −1] > Δk and l[subscript B][superscript −1] < Δk regions. We also find that the Dirac and possibly Weyl systems host counterpropagating edge states between the zeroth Landau levels, leading to a state with metallic side walls and zero Hall conductance. en_US
dc.publisher American Physical Society en_US
dc.relation.isversionof en_US
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. en_US
dc.source American Physical Society en_US
dc.title Emergence of gapped bulk and metallic side walls in the zeroth Landau level in Dirac and Weyl semimetals en_US
dc.type Article en_US
dc.identifier.citation Chan, Ching-Kit, and Patrick A. Lee. “Emergence of Gapped Bulk and Metallic Side Walls in the Zeroth Landau Level in Dirac and Weyl Semimetals.” Physical Review B, vol. 96, no. 19, Nov. 2017. © 2017 American Physical Society en_US
dc.contributor.department Massachusetts Institute of Technology. Department of Physics en_US
dc.contributor.mitauthor Lee, Patrick A
dc.relation.journal Physical Review B en_US
dc.identifier.mitlicense PUBLISHER_POLICY en_US
dc.eprint.version Final published version en_US
dc.type.uri en_US
eprint.status en_US 2017-11-21T17:59:21Z
dc.language.rfc3066 en
dc.rights.holder American Physical Society
dspace.orderedauthors Chan, Ching-Kit; Lee, Patrick A. en_US
dspace.embargo.terms N en_US

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