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Pairing from dynamically screened Coulomb repulsion in bismuth

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Show simple item record Ruhman, Yehonatan Lee, Patrick A 2017-12-06T18:13:30Z 2017-12-06T18:13:30Z 2017-12 2017-06
dc.identifier.issn 2469-9950
dc.identifier.issn 2469-9969
dc.description.abstract Recently, Prakash et al. have discovered bulk superconductivity in single crystals of bismuth, which is a semimetal with extremely low carrier density. At such low density, we argue that conventional electron-phonon coupling is too weak to be responsible for the binding of electrons into Cooper pairs. We study a dynamically screened Coulomb interaction with effective attraction generated on the scale of the collective plasma modes. We model the electronic states in bismuth to include three Dirac pockets with high velocity and one hole pocket with a significantly smaller velocity. We find a weak-coupling instability, which is greatly enhanced by the presence of the hole pocket. Therefore we argue that bismuth is the first material to exhibit superconductivity driven by retardation effects of Coulomb repulsion alone. By using realistic parameters for bismuth we find that the acoustic plasma mode does not play the central role in pairing. We also discuss a matrix element effect, resulting from the Dirac nature of the conduction band, which may affect T[subscript c] in the s-wave channel without breaking time-reversal symmetry. en_US
dc.description.sponsorship Gordon and Betty Moore Foundation (Grant GBMF4303) en_US
dc.description.sponsorship United States. Department of Energy (Grant FG02-03ER46076) en_US
dc.publisher American Physical Society en_US
dc.relation.isversionof en_US
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. en_US
dc.source American Physical Society en_US
dc.title Pairing from dynamically screened Coulomb repulsion in bismuth en_US
dc.type Article en_US
dc.identifier.citation Ruhman, Jonathan and Lee, Patrick A. "Pairing from dynamically screened Coulomb repulsion in bismuth." Physical Review B 96, 23 (December 2017): 235107 © 2017 American Physical Society en_US
dc.contributor.department Massachusetts Institute of Technology. Department of Physics en_US
dc.contributor.mitauthor Ruhman, Yehonatan
dc.contributor.mitauthor Lee, Patrick A
dc.relation.journal Physical Review B en_US
dc.identifier.mitlicense PUBLISHER_POLICY en_US
dc.eprint.version Final published version en_US
dc.type.uri en_US
eprint.status en_US 2017-12-05T18:00:23Z
dc.language.rfc3066 en
dc.rights.holder American Physical Society
dspace.orderedauthors Ruhman, Jonathan; Lee, Patrick A. en_US
dspace.embargo.terms N en_US

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