Gamma radiation effects in amorphous silicon and silicon nitride photonic devices
Author(s)Du, Qingyang; Huang, Yizhong; Ogbuu, Okechukwu; Zhang, Wei; Li, Junying; Singh, Vivek; Agarwal, Anuradha; Hu, Juejun; ... Show more Show less
MetadataShow full item record
Understanding radiation damage is of significant importance for devices operating in radiation-harsh environments. In this Letter, we present a systematic study on gamma radiation effects in amorphous silicon and silicon nitride guided wave devices. It is found that gamma radiation increases the waveguide modal effective indices by as much as 4×10⁻³ in amorphous silicon and 5×10⁻⁴ in silicon nitride at 10 Mrad dose. This Letter further reveals that surface oxidation and radiation-induced densification account for the observed index change.
DepartmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
Optical Society of America
Du, Qingyang et al. “Gamma Radiation Effects in Amorphous Silicon and Silicon Nitride Photonic Devices.” Optics Letters 42, 3 (January 2017): 587-590 © 2017 Optical Society of America