Show simple item record

dc.contributor.authorMendes, J. B. S.
dc.contributor.authorAlves Santos, O.
dc.contributor.authorHolanda, J.
dc.contributor.authorLoreto, R. P.
dc.contributor.authorde Araujo, C. I. L.
dc.contributor.authorAzevedo, A.
dc.contributor.authorRezende, S. M.
dc.contributor.authorMoodera, Jagadeesh
dc.contributor.authorChang, Cui-zu
dc.date.accessioned2017-12-21T19:38:19Z
dc.date.available2017-12-21T19:38:19Z
dc.date.issued2017-11
dc.date.submitted2017-08
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.urihttp://hdl.handle.net/1721.1/112924
dc.description.abstractWe report the spin-to-charge current conversion in an intrinsic topological insulator (TI) (Bi[subscript 0.22]Sb[subscript 0.78])[subscript 2]Te[subscript 3] film at room temperature. The spin currents are generated in a thin layer of permalloy (Py) by two different processes, the spin pumping effect (SPE) and the spin Seebeck effect (SSE). In the first, we use microwave-driven ferromagnetic resonance of the Py film to generate a SPE spin current that is injected into the TI (Bi[subscript 0.22]Sb[subscript 0.78])[subscript 2]Te[subscript 3] layer in direct contact with Py. In the second, we use the SSE in the longitudinal configuration in Py without contamination by the anomalous Nernst effect, which was made possible with a thin NiO layer between the Py and (Bi[subscript 0.22]Sb[subscript 0.78])[subscript 2]Te[subscript 3] layers. The spin-to-charge current conversion is dominated by the TI surface states and is attributed to the inverse Edelstein effect (IEE), which is made possible by the spin-momentum locking in the electron Fermi contours due to the Rashba field. The measurements by the two techniques yield very similar values for the IEE parameter, which are larger than the reported values in the previous studies on topological insulators.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant DMR12074609)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grants DMR-1700137)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant DMR-0819762)en_US
dc.description.sponsorshipUnited States. Office of Naval Research (Grant N00014-16-1-2657)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (STC Center for Integrated Quantum Materials. Grant DMR-1231319)en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.96.180415en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleDirac-surface-state-dominated spin to charge current conversion in the topological insulator (Bi[subscript 0.22]Sb[subscript 0.78])[subscript 2]Te[subscript 3] films at room temperatureen_US
dc.typeArticleen_US
dc.identifier.citationMendes, J. B. S., et al. “Dirac-Surface-State-Dominated Spin to Charge Current Conversion in the Topological Insulator (Bi{subscript 0.22]Sb[subscript 0.78])[subscript 2]Te[subscript 3] Films at Room Temperature.” Physical Review B, vol. 96, no. 18, Nov. 2017. © 2017 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.departmentFrancis Bitter Magnet Laboratory (Massachusetts Institute of Technology)en_US
dc.contributor.mitauthorMoodera, Jagadeesh
dc.contributor.mitauthorChang, Cui-zu
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2017-11-28T18:00:10Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsMendes, J. B. S.; Alves Santos, O.; Holanda, J.; Loreto, R. P.; de Araujo, C. I. L.; Chang, Cui-Zu; Moodera, J. S.; Azevedo, A.; Rezende, S. M.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-2480-1211
dc.identifier.orcidhttps://orcid.org/0000-0001-7413-5715
mit.licensePUBLISHER_POLICYen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record