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dc.contributor.authorLiu, Junwei
dc.contributor.authorWang, Hua
dc.contributor.authorFang, Chen
dc.contributor.authorFu, Liang
dc.contributor.authorQian, Xiaofeng
dc.date.accessioned2017-12-22T15:20:01Z
dc.date.available2017-12-22T15:20:01Z
dc.date.issued2016-12
dc.date.submitted2016-10
dc.identifier.issn1530-6984
dc.identifier.issn1530-6992
dc.identifier.urihttp://hdl.handle.net/1721.1/112931
dc.description.abstractNovel materials with nontrivial electronic and photonic band topology are crucial for realizing novel devices with low power consumption and heat dissipation and quantum computing free of decoherence. Here, we theoretically predict a novel class of ternary transition metal chalcogenides that exhibit dual topological characteristics, quantum spin Hall insulators (QSHIs) in their two-dimensional (2D) monolayers and topological Weyl semimetals in their 3D noncentrosymmetric crystals upon van der Waals (vdW) stacking. Remarkably, we find that one can create and annihilate Weyl fermions and realize the transition between Type-I and Type-II Weyl fermions by tuning vdW interlayer spacing, providing the missing physical picture of the evolution from 2D QSHIs to 3D Weyl semimetals. Our results also show that these materials possess excellent thermodynamic stability and weak interlayer binding; some of them were synthesized two decades ago, implying their great potentials for experimental synthesis, characterization, and vdW heterostacking. Moreover, their ternary nature will offer more tunability for electronic structure by controlling different stoichiometry and valence charges. Our findings provide an ideal materials platform for realizing QSH effect and exploring fundamental topological phase transition and will open up a variety of new opportunities for two-dimensional materials and topological materials research.en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Materials Research Science and Engineering Centers (Program) (Award DMR-1419807)en_US
dc.description.sponsorshipUnited States. Department of Energy. Division of Materials Sciences and Engineering (Award DE-SC0010526)en_US
dc.publisherAmerican Chemical Society (ACS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/ACS.NANOLETT.6B04487en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourcearXiven_US
dc.titlevan der Waals Stacking-Induced Topological Phase Transition in Layered Ternary Transition Metal Chalcogenidesen_US
dc.typeArticleen_US
dc.identifier.citationLiu, Junwei, et al. “Van Der Waals Stacking-Induced Topological Phase Transition in Layered Ternary Transition Metal Chalcogenides.” Nano Letters, vol. 17, no. 1, Jan. 2017, pp. 467–75.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorLiu, Junwei
dc.contributor.mitauthorFu, Liang
dc.relation.journalNano Lettersen_US
dc.eprint.versionOriginal manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dc.date.updated2017-12-22T13:20:30Z
dspace.orderedauthorsLiu, Junwei; Wang, Hua; Fang, Chen; Fu, Liang; Qian, Xiaofengen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0001-8051-7349
dc.identifier.orcidhttps://orcid.org/0000-0002-8803-1017
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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