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dc.contributor.authorWang, Aifeng
dc.contributor.authorGraf, D.
dc.contributor.authorLiu, Yu
dc.contributor.authorDu, Qianheng
dc.contributor.authorLei, Hechang
dc.contributor.authorPetrovic, C.
dc.contributor.authorZheng, Jiabao
dc.date.accessioned2018-01-30T18:12:36Z
dc.date.available2018-01-30T18:12:36Z
dc.date.issued2017-09
dc.date.submitted2017-04
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.urihttp://hdl.handle.net/1721.1/113349
dc.description.abstractWe report a magnetotransport study on type-II Weyl semimetal WP[subscript 2] single crystals. Magnetoresistance exhibits a nonsaturating H[superscript n] field dependence (14 300% at 2 K and 9 T), whereas systematic violation of Kohler's rule was observed. Quantum oscillations reveal a complex multiband electronic structure. The cyclotron effective mass close to the mass of free electron m[subscript e] was observed in quantum oscillations along the b axis, while a reduced effective mass of about 0.5m[subscript e] was observed in a-axis quantum oscillations, suggesting Fermi surface anisotropy. The temperature dependence of the resistivity shows a large upturn that cannot be explained by the multiband magnetoresistance of conventional metals. Even though the crystal structure of WP[subscript 2] is not layered as in transition-metal dichalcogenides, quantum oscillations suggest partial two-dimensional character.en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.96.121107en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleLarge magnetoresistance in the type-II Weyl semimetal semimetal WP[subscript 2]en_US
dc.typeArticleen_US
dc.identifier.citationWang, Aifeng, et al. “Large Magnetoresistance in the Type-II Weyl Semimetal WP 2.” Physical Review B, vol. 96, no. 12, Sept. 2017. © 2017 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.mitauthorZheng, Jiabao
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2017-11-14T22:46:13Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsWang, Aifeng; Graf, D.; Liu, Yu; Du, Qianheng; Zheng, Jiabao; Lei, Hechang; Petrovic, C.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0003-2099-7015
mit.licensePUBLISHER_POLICYen_US


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