dc.contributor.author | Syzranov, S. V. | |
dc.contributor.author | Skinner, Brian J | |
dc.date.accessioned | 2018-02-22T18:31:51Z | |
dc.date.available | 2018-02-22T18:31:51Z | |
dc.date.issued | 2017-10 | |
dc.date.submitted | 2017-01 | |
dc.identifier.issn | 2469-9950 | |
dc.identifier.issn | 2469-9969 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/113866 | |
dc.description.abstract | We study the electrical conductivity in a nodal-line semimetal with charged impurities. The screening of the Coulomb potential in this system is qualitatively different from what is found in conventional metals or semiconductors, with the screened potential ϕ decaying as ϕ∝1/r[superscript 2] over a wide interval of distances r. This unusual screening gives rise to a rich variety of conduction regimes as a function of temperature, doping level, and impurity concentration. In particular, nodal-line semimetals exhibit a diverging mobility ∝1/|μ| in the limit of vanishing chemical potential μ, a linearly increasing dependence of the conductivity on temperature, σ∝T, and a large weak-localization correction with a strongly anisotropic dependence on magnetic field. | en_US |
dc.description.sponsorship | Massachusetts Institute of Technology. Energy Frontier Research Center for Excitonics (Award DE-SC0001088) | en_US |
dc.publisher | American Physical Society | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevB.96.161105 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | American Physical Society | en_US |
dc.title | Electron transport in nodal-line semimetals | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Syzranov, S. V., and B. Skinner. “Electron Transport in Nodal-Line Semimetals.” Physical Review B, vol. 96, no. 16, Oct. 2017. © 2017 American Physical Society | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Research Laboratory of Electronics | en_US |
dc.contributor.mitauthor | Skinner, Brian J | |
dc.relation.journal | Physical Review B | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dc.date.updated | 2017-11-14T22:44:46Z | |
dc.language.rfc3066 | en | |
dc.rights.holder | American Physical Society | |
dspace.orderedauthors | Syzranov, S. V.; Skinner, B. | en_US |
dspace.embargo.terms | N | en_US |
dc.identifier.orcid | https://orcid.org/0000-0003-0774-3563 | |
mit.license | PUBLISHER_POLICY | en_US |