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dc.contributor.authorRichardella, A.
dc.contributor.authorSamarth, N.
dc.contributor.authorHan, Jiahao
dc.contributor.authorSiddiqui, Saima Afroz
dc.contributor.authorFinley, Joseph Tyler
dc.contributor.authorLiu, Luqiao
dc.date.accessioned2018-04-13T19:03:15Z
dc.date.available2018-04-13T19:03:15Z
dc.date.issued2017-08
dc.date.submitted2017-06
dc.identifier.issn0031-9007
dc.identifier.issn1079-7114
dc.identifier.urihttp://hdl.handle.net/1721.1/114722
dc.description.abstractThe strongly spin-momentum coupled electronic states in topological insulators (TI) have been extensively pursued to realize efficient magnetic switching. However, previous studies show a large discrepancy of the charge-spin conversion efficiency. Moreover, current-induced magnetic switching with TI can only be observed at cryogenic temperatures. We report spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The obtained effective spin Hall angle of TI is substantially larger than the previously studied heavy metals. Our results demonstrate robust charge-spin conversion in TI and provide a direct avenue towards applicable TI-based spintronic devices.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant DMR-141980)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant 1639921)en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.119.077702en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleRoom-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulatoren_US
dc.typeArticleen_US
dc.identifier.citationHan, Jiahao et al. "Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator." Physical Review Letters 119, 7 (August 2017): 077702 © 2017 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.mitauthorHan, Jiahao
dc.contributor.mitauthorSiddiqui, Saima Afroz
dc.contributor.mitauthorFinley, Joseph Tyler
dc.contributor.mitauthorLiu, Luqiao
dc.relation.journalPhysical Review Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2017-11-14T22:46:59Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsHan, Jiahao; Richardella, A.; Siddiqui, Saima A.; Finley, Joseph; Samarth, N.; Liu, Luqiaoen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-9884-0598
dc.identifier.orcidhttps://orcid.org/0000-0002-6179-599X
dc.identifier.orcidhttps://orcid.org/0000-0001-6892-8102
mit.licensePUBLISHER_POLICYen_US


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