Logarithmic singularities and quantum oscillations in magnetically doped topological insulators
Author(s)
Nandi, D.; Shain, K.; Lee, G. H.; Huang, K.-F.; Chang, Cui-Zu; Ou, Yunbo; Lee, S. P.; Ward, J.; Moodera, J. S.; Kim, P.; Yacoby, A.; Sodemann Villadiego, Inti A.; ... Show more Show less
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We report magnetotransport measurements on magnetically doped (Bi,Sb)[subscript 2]Te[subscript 3] films grown by molecular beam epitaxy. In Hall bar devices, we observe logarithmic dependence of transport coefficients in temperature and bias voltage which can be understood to arise from electron-electron interaction corrections to the conductivity and self-heating. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport.
Date issued
2018-02Department
Massachusetts Institute of Technology. Department of PhysicsJournal
Physical Review B
Publisher
American Physical Society
Citation
Nandi, D. et al. "Logarithmic singularities and quantum oscillations in magnetically doped topological insulators." Physical Review B 97, 8 (February 2018): 085151 © 2018 American Physical Society
Version: Final published version
ISSN
2469-9950
2469-9969