Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors
Author(s)Mackin, Charles Edward; McVay, Elaine D.; Palacios, Tomas
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This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
“Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors.” Sensors 18, 2 (February 2018): 494 © 2018 The Authors
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