dc.contributor.author | Zhang, Yuhao | |
dc.contributor.author | Sun, Min | |
dc.contributor.author | Jayanta Joglekar, Sameer | |
dc.contributor.author | Fujishima, Tatsuya | |
dc.contributor.author | Palacios, Tomas | |
dc.date.accessioned | 2018-06-06T19:28:13Z | |
dc.date.available | 2018-06-06T19:28:13Z | |
dc.date.issued | 2013-06 | |
dc.date.submitted | 2013-03 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.issn | 1077-3118 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/116161 | |
dc.description.abstract | This paper demonstrates the compensation of the intrinsic positive charges in Al₂O₃ gate dielectric by fluorine ions in GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs). Negatively-charged fluorine ions diffused into the oxide from the AlGaN barrier during the 250 °C atomic layer deposition compensate the intrinsic positive charge present in the Al₂O₃. This compensation is key to control the threshold voltage (Vth) of enhancement-mode (E-mode) transistors. A comprehensive analytical model for the V[subscript th] of fluorinated MOS-HEMTs was established and verified by experimental data. This model allows the calculation of the different charge components in order to optimize the transistor structure for E-mode operation. Using the proposed charge compensation, the V[subscript th] increases with gate dielectric thickness, exceeding 3.5V for gate dielectrics 25 nm thick. | en_US |
dc.language.iso | en_US | |
dc.publisher | American Institute of Physics (AIP) | en_US |
dc.relation.isversionof | https://doi.org/10.1063/1.4815923 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | Zhang, Yuhao | en_US |
dc.title | Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Zhang, Yuhao et al. “Threshold Voltage Control by Gate Oxide Thickness in Fluorinated GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.” Applied Physics Letters 103, 3 (July 2013): 033524 © 2013 AIP Publishing | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Microsystems Technology Laboratories | en_US |
dc.contributor.approver | Zhang, Yuhao | en_US |
dc.contributor.mitauthor | Zhang, Yuhao | |
dc.contributor.mitauthor | Sun, Min | |
dc.contributor.mitauthor | Jayanta Joglekar, Sameer | |
dc.contributor.mitauthor | Fujishima, Tatsuya | |
dc.contributor.mitauthor | Palacios, Tomas | |
dc.relation.journal | Applied Physics Letters | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Zhang, Yuhao; Sun, Min; Joglekar, Sameer J.; Fujishima, Tatsuya; Palacios, Tomás | en_US |
dspace.embargo.terms | N | en_US |
dc.identifier.orcid | https://orcid.org/0000-0002-2849-5653 | |
dc.identifier.orcid | https://orcid.org/0000-0003-4858-8264 | |
dc.identifier.orcid | https://orcid.org/0000-0003-3081-6425 | |
dc.identifier.orcid | https://orcid.org/0000-0002-2190-563X | |
mit.license | PUBLISHER_POLICY | en_US |