Quantum Oscillation from In-Gap States and a Non-Hermitian Landau Level Problem
Author(s)
Shen, Huitao; Fu, Liang
DownloadPhysRevLett.121.026403.pdf (350.1Kb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Terms of use
Metadata
Show full item recordAbstract
Motivated by recent experiments on Kondo insulators, we theoretically study quantum oscillations from disorder-induced in-gap states in small-gap insulators. By solving a non-Hermitian Landau level problem that incorporates the imaginary part of electron’s self-energy, we show that the oscillation period is determined by the Fermi surface area in the absence of the hybridization gap, and we derive an analytical formula for the oscillation amplitude as a function of the indirect band gap, scattering rates, and temperature. Over a wide parameter range, we find that the effective mass is controlled by scattering rates, while the Dingle factor is controlled by the indirect band gap. We also show the important effect of scattering rates in reshaping the quasiparticle dispersion in connection with angle-resolved photoemission measurements on heavy fermion materials.
Date issued
2018-07Department
Massachusetts Institute of Technology. Department of PhysicsJournal
Physical Review Letters
Publisher
American Physical Society
Citation
Shen, Huitao and Liang Fu. "Quantum Oscillation from In-Gap States and a Non-Hermitian Landau Level Problem." Physical Review Letters 121 (2018), 026403.
Version: Final published version
ISSN
0031-9007
1079-7114