dc.contributor.author | Feng, Dan | |
dc.contributor.author | Chen, Yue-Xing | |
dc.contributor.author | Fu, Liang-Wei | |
dc.contributor.author | Li, Ju | |
dc.contributor.author | He, Jia-Qing | |
dc.date.accessioned | 2018-07-25T16:47:18Z | |
dc.date.available | 2018-10-07T05:00:05Z | |
dc.date.issued | 2017-12 | |
dc.date.submitted | 2017-10 | |
dc.identifier.issn | 1001-0521 | |
dc.identifier.issn | 1867-7185 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/117116 | |
dc.description.abstract | Earth-abundant IV–VI semiconductor SnSe is regarded as a promising thermoelectric material due to its intrinsic low thermal conductivity. In this report, the highly textured SnSe/Ag2Se composites were first designed by solid solution method followed by spark plasma sintering (SPS) and their thermoelectric properties in two directions were investigated, and then, the performance of composites was further optimized with an additional ball milling. The coexistence of SnSe and Ag2Se phases is clearly confirmed by energy-dispersive X-ray spectroscopy (EDX) in transmission electron microscopy (TEM). After ball milling, the size of SnSe grains as well as the incorporated Ag2Se particles reduces effectively, which synergistically optimizes the electrical and thermal transport properties at high temperature range. As a result, a maximum ZT of ~ 0.74 at 773 K for SnSe + 1.0%Ag2Se in the direction vertical to the pressing direction is achieved. Composite engineering with additional ball milling is thus proved to be an efficient way to improve the thermoelectric properties of SnSe, and this strategy could be applicable to other thermoelectric systems. | en_US |
dc.description.sponsorship | National Science Foundation (U.S.) (No. DMR-1410636) | en_US |
dc.description.sponsorship | Natural Science Foundation (Guangdong Sheng (China)) (No. 2015A030308001) | en_US |
dc.description.sponsorship | Leading Talents of Guangdong Province Program (No. 00201517) | en_US |
dc.description.sponsorship | Science, Technology and Innovation Commission of Shenzhen Municipality (No. JCYJ20150831142508365) | en_US |
dc.description.sponsorship | Science, Technology and Innovation Commission of Shenzhen Municipality (No. KQTD2016022619565991) | en_US |
dc.description.sponsorship | Science, Technology and Innovation Commission of Shenzhen Municipality (No. KQCX2015033110182370) | en_US |
dc.description.sponsorship | National Science Council (China) (No. 51632005) | en_US |
dc.description.sponsorship | China Postdoctoral Science Foundation | en_US |
dc.publisher | Nonferrous Metals Society of China | en_US |
dc.relation.isversionof | https://doi.org/10.1007/s12598-017-0994-6 | en_US |
dc.rights | Creative Commons Attribution-Noncommercial-Share Alike | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/4.0/ | en_US |
dc.source | Nonferrous Metals Society of China | en_US |
dc.title | SnSe + Ag₂Se composite engineering with ball milling for enhanced thermoelectric performance | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Feng, Dan, Yue-Xing Chen, Liang-Wei Fu, Ju Li, and Jia-Qing He. “SnSe + Ag2Se Composite Engineering with Ball Milling for Enhanced Thermoelectric Performance.” Rare Metals 37, no. 4 (December 28, 2017): 333–342. | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Nuclear Science and Engineering | en_US |
dc.contributor.mitauthor | Li, Ju | |
dc.relation.journal | Rare Metals | en_US |
dc.eprint.version | Author's final manuscript | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dc.date.updated | 2018-04-12T04:28:11Z | |
dc.language.rfc3066 | en | |
dc.rights.holder | The Nonferrous Metals Society of China and Springer-Verlag GmbH Germany, part of Springer Nature | |
dspace.orderedauthors | Feng, Dan; Chen, Yue-Xing; Fu, Liang-Wei; Li, Ju; He, Jia-Qing | en_US |
dspace.embargo.terms | N | en |
dc.identifier.orcid | https://orcid.org/0000-0002-7841-8058 | |
mit.license | OPEN_ACCESS_POLICY | en_US |