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Ambient-pressure CVD of graphene on low-index Ni surfaces using methane: A combined experimental and first-principles study

Author(s)
Olmos-Asar, Jimena A.; Negreiros, Fabio R.; Kim, Ki Kang; Kong, Jing; Mankey, Gary J.; Araujo, Paulo T.; Mafra, Daniela Lopes; Dresselhaus, Mildred; Reina Cecco, Alfonso; ... Show more Show less
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.

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Abstract
The growth of large area single-layer graphene (1-LG) is studied using ambient pressure chemical vapor deposition on single-crystal Ni(111), Ni(110), and Ni(100). By varying both the furnace temperature in the range of 800–1100 °C and the gas flow through the growth chamber, uniform, high-quality 1-LG is obtained for Ni(111) and Ni(110) single crystals and for Ni(100) thin films. Surprisingly, only multilayer graphene growth could be obtained for single-crystal Ni(100). The experimental results are analyzed to determine the optimum combination of temperature and gas flow. Characterization with optical microscopy, Raman spectroscopy, and optical transmission support our findings. Density-functional theory calculations are performed to determine the energy barriers for diffusion, segregation, and adsorption, and model the kinetic pathways for formation of different carbon structures on the low-index surfaces of Ni.
Date issued
2018-07
URI
http://hdl.handle.net/1721.1/117137
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Department of Physics
Journal
Physical Review Materials
Publisher
American Physical Society
Citation
Mafra, Daniela L. et al. "Ambient-pressure CVD of graphene on low-index Ni surfaces using methane: A combined experimental and first-principles study." Physical Review Materials 2, 7 (July 2018): 073404 © 2018 American Physical Society
Version: Final published version
ISSN
2475-9953

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