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dc.contributor.authorZhao, Weiwei
dc.contributor.authorGarlow, Joseph A.
dc.contributor.authorWu, Lijun
dc.contributor.authorZhu, Yimei
dc.contributor.authorChan, Moses H. W.
dc.contributor.authorLi, Mingda
dc.contributor.authorSong, Qichen
dc.contributor.authorLiu, Te Huan
dc.contributor.authorMoodera, Jagadeesh
dc.contributor.authorChen, Gang
dc.contributor.authorChang, Cui-zu
dc.date.accessioned2018-09-06T19:27:06Z
dc.date.available2018-09-06T19:27:06Z
dc.date.issued2017-11
dc.date.submitted2017-06
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.urihttp://hdl.handle.net/1721.1/117658
dc.description.abstractThe possible realization of dissipationless chiral edge current in a topological insulator/magnetic insulator heterostructure is based on the condition that the magnetic proximity exchange coupling at the interface is dominated by the Dirac surface states of the topological insulator. Here we report a polarized neutron reflectometry observation of Dirac-electron-mediated magnetic proximity effect in a bulk-insulating topological insulator (Bi0.2Sb0.8)2Te3/magnetic insulator EuS heterostructure. We are able to maximize the proximity-induced magnetism by applying an electrical back gate to tune the Fermi level of topological insulator to be close to the Dirac point. A phenomenological model based on diamagnetic screening is developed to explain the suppressed proximity-induced magnetism at high carrier density. Our work paves the way to utilize the magnetic proximity effect at the topological insulator/magnetic insulator heterointerface for low-power spintronic applications.en_US
dc.description.sponsorshipUnited States. Department of Energy. Office of Basic Energy Sciences (Award DE-SC0001299)en_US
dc.description.sponsorshipUnited States. Department of Energy. Office of Basic Energy Sciences (Award DE-FG02-09ER46577)en_US
dc.publisherAmerican Physical Society (APS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PHYSREVB.96.201301en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleDirac-electron-mediated magnetic proximity effect in topological insulator/magnetic insulator heterostructuresen_US
dc.typeArticleen_US
dc.identifier.citationLi, Mingda et al. “Dirac-Electron-Mediated Magnetic Proximity Effect in Topological Insulator/magnetic Insulator Heterostructures.” Physical Review B 96, 20 (November 2017): 201301(R) © 2017 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Laboratory for Nuclear Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Plasma Science and Fusion Centeren_US
dc.contributor.departmentFrancis Bitter Magnet Laboratory (Massachusetts Institute of Technology)en_US
dc.contributor.mitauthorLi, Mingda
dc.contributor.mitauthorSong, Qichen
dc.contributor.mitauthorLiu, Te Huan
dc.contributor.mitauthorMoodera, Jagadeesh
dc.contributor.mitauthorChen, Gang
dc.contributor.mitauthorChang, Cui-zu
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2018-08-28T13:52:24Z
dspace.orderedauthorsLi, Mingda; Song, Qichen; Zhao, Weiwei; Garlow, Joseph A.; Liu, Te-Huan; Wu, Lijun; Zhu, Yimei; Moodera, Jagadeesh S.; Chan, Moses H. W.; Chen, Gang; Chang, Cui-Zuen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-7055-6368
dc.identifier.orcidhttps://orcid.org/0000-0002-1090-4068
dc.identifier.orcidhttps://orcid.org/0000-0002-1157-8540
dc.identifier.orcidhttps://orcid.org/0000-0002-2480-1211
dc.identifier.orcidhttps://orcid.org/0000-0002-3968-8530
dc.identifier.orcidhttps://orcid.org/0000-0001-7413-5715
mit.licensePUBLISHER_POLICYen_US


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