Show simple item record

dc.contributor.authorArmiento, R
dc.contributor.authorChan, M K Y
dc.contributor.authorLazic, Predrag
dc.contributor.authorHerbert, Francis William
dc.contributor.authorSun, Ruoshi
dc.contributor.authorChakraborty, Rupak
dc.contributor.authorBuonassisi, Anthony
dc.contributor.authorYildiz, Bilge
dc.contributor.authorCeder, Gerbrand
dc.contributor.authorHartman, Katy
dc.date.accessioned2018-10-04T18:52:30Z
dc.date.available2018-10-04T18:52:30Z
dc.date.issued2013-10
dc.date.submitted2013-04
dc.identifier.issn0953-8984
dc.identifier.issn1361-648X
dc.identifier.urihttp://hdl.handle.net/1721.1/118360
dc.description.abstractPyrite (FeS₂), being a promising material for future solar technologies, has so far exhibited in experiments an open-circuit voltage (OCV) of around 0.2 V, which is much lower than the frequently quoted 'accepted' value for the fundamental bandgap of ∼0.95 eV. Absorption experiments show large subgap absorption, commonly attributed to defects or structural disorder. However, computations using density functional theory with a semi-local functional predict that the bottom of the conduction band consists of a very low intensity sulfur p-band that may be easily overlooked in experiments because of the high intensity onset that appears 0.5 eV higher in energy. The intensity of absorption into the sulfur p-band is found to be of the same magnitude as contributions from defects and disorder. Our findings suggest the need to re-examine the value of the fundamental bandgap of pyrite presently in use in the literature. If the contribution from the p-band has so far been overlooked, the substantially lowered bandgap would partly explain the discrepancy with the OCV. Furthermore, we show that more states appear on the surface within the low energy sulfur p-band, which suggests a mechanism of thermalization into those states that would further prevent extracting electrons at higher energy levels through the surface. Finally, we speculate on whether misidentified states at the conduction band onset may be present in other materials.en_US
dc.publisherIOP Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0953-8984/25/46/465801en_US
dc.rightsCreative Commons Attribution 3.0 Unported licenseen_US
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en_US
dc.sourceIOP Publishingen_US
dc.titleLow Intensity Conduction States in FeS₂: Implications for Absorption, Open-Circuit Voltage and Surface Recombinationen_US
dc.typeArticleen_US
dc.identifier.citationLazić, P et al. “Low Intensity Conduction States in FeS₂: Implications for Absorption, Open-Circuit Voltage and Surface Recombination.” Journal of Physics: Condensed Matter 25, 46 (October 2013): 465801 © 2013 IOP Publishing Ltden_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Nuclear Science and Engineeringen_US
dc.contributor.mitauthorLazic, Predrag
dc.contributor.mitauthorHerbert, Francis William
dc.contributor.mitauthorSun, Ruoshi
dc.contributor.mitauthorChakraborty, Rupak
dc.contributor.mitauthorHartman, Katherine
dc.contributor.mitauthorBuonassisi, Anthony
dc.contributor.mitauthorYildiz, Bilge
dc.contributor.mitauthorCeder, Gerbrand
dc.relation.journalJournal of Physics: Condensed Matteren_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2018-09-24T12:59:58Z
dspace.orderedauthorsLazić, P; Armiento, R; Herbert, F W; Chakraborty, R; Sun, R; Chan, M K Y; Hartman, K; Buonassisi, T; Yildiz, B; Ceder, Gen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-6833-3480
dc.identifier.orcidhttps://orcid.org/0000-0002-7043-5048
dc.identifier.orcidhttps://orcid.org/0000-0001-8345-4937
dc.identifier.orcidhttps://orcid.org/0000-0002-2688-5666
mit.licensePUBLISHER_CCen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record