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dc.contributor.authorWang, Xiaoxue
dc.contributor.authorZhang, Xu
dc.contributor.authorSun, Lei
dc.contributor.authorLee, Dongwook
dc.contributor.authorLee, Sunghwan
dc.contributor.authorWang, Minghui
dc.contributor.authorZhao, Junjie
dc.contributor.authorShao-Horn, Yang
dc.contributor.authorDinca, Mircea
dc.contributor.authorPalacios, Tomas
dc.contributor.authorGleason, Karen K
dc.date.accessioned2018-10-11T13:15:26Z
dc.date.available2018-10-11T13:15:26Z
dc.date.issued2018-09
dc.date.submitted2018-03
dc.identifier.issn2375-2548
dc.identifier.urihttp://hdl.handle.net/1721.1/118423
dc.description.abstractAir-stable, lightweight, and electrically conductive polymers are highly desired as the electrodes for next-generation electronic devices. However, the low electrical conductivity and low carrier mobility of polymers are the key bottlenecks that limit their adoption.We demonstrate that the key to addressing these limitations is tomolecularly engineer the crystallization and morphology of polymers. We use oxidative chemical vapor deposition (oCVD) and hydrobromic acid treatment as an effective tool to achieve such engineering for conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT). We demonstrate PEDOT thin filmswith a record-high electrical conductivity of 6259 S/cm and a remarkably high carriermobility of 18.45 cm2V-1s-1by inducing a crystallite-configuration transition using oCVD. Subsequent theoretical modeling reveals a metallic nature and an effective reduction of the carrier transport energy barrier between crystallized domains in these thin films. To validate this metallic nature, we successfully fabricate PEDOT-Si Schottky diode arrays operating at 13.56MHzfor radio frequency identification (RFID) readers, demonstratingwafer-scale fabrication compatible with conventional complementary metal-oxide semiconductor (CMOS) technology. The oCVD PEDOT thin films with ultrahigh electrical conductivity and high carrier mobility show great promise for novel high-speed organic electronics with low energy consumption and better charge carrier transport.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (grant DMR-1231319)en_US
dc.description.sponsorshipUnited States. Air Force. Office of Scientific Research, Failure Testing Service, Multidisciplinary Research Program of the University Research Initiative ((grant no. FA9550-15-1-0514)en_US
dc.description.sponsorshipUnited States. Department of Energy. Office of Basic Energy Science (award no. DE-SC0001088 (MIT))en_US
dc.description.sponsorshipUnited States. Department of Energy. Office of Basic Energy Science (award no. DE-SC0001299)en_US
dc.description.sponsorshipSamsung Scholarship Programen_US
dc.description.sponsorshipNational Science Foundation (U.S.). Materials Research Science and Engineering Centers (Program) (DMR-1719875)en_US
dc.publisherAmerican Association for the Advancement of Science (AAAS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1126/sciadv.aat5780en_US
dc.rightsCreative Commons Attribution-NonCommercial 4.0 Internationalen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc/4.0/en_US
dc.sourceScience Advancesen_US
dc.titleHigh electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatmenten_US
dc.typeArticleen_US
dc.identifier.citationWang, Xiaoxue, Xu Zhang, Lei Sun, Dongwook Lee, Sunghwan Lee, Minghui Wang, Junjie Zhao, et al. “High Electrical Conductivity and Carrier Mobility in oCVD PEDOT Thin Films by Engineered Crystallization and Acid Treatment.” Science Advances 4, no. 9 (September 2018): eaat5780.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemistryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.mitauthorWang, Xiaoxue
dc.contributor.mitauthorZhang, Xu
dc.contributor.mitauthorSun, Lei
dc.contributor.mitauthorLee, Dongwook
dc.contributor.mitauthorLee, Sunghwan
dc.contributor.mitauthorWang, Minghui
dc.contributor.mitauthorZhao, Junjie
dc.contributor.mitauthorShao-Horn, Yang
dc.contributor.mitauthorDinca, Mircea
dc.contributor.mitauthorPalacios, Tomas
dc.contributor.mitauthorGleason, Karen K
dc.relation.journalScience Advancesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2018-10-10T16:25:46Z
dspace.orderedauthorsWang, Xiaoxue; Zhang, Xu; Sun, Lei; Lee, Dongwook; Lee, Sunghwan; Wang, Minghui; Zhao, Junjie; Shao-Horn, Yang; Dincă, Mircea; Palacios, Tomás; Gleason, Karen K.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-0388-8311
dc.identifier.orcidhttps://orcid.org/0000-0002-2805-3353
dc.identifier.orcidhttps://orcid.org/0000-0003-2609-4204
dc.identifier.orcidhttps://orcid.org/0000-0002-1262-1264
dc.identifier.orcidhttps://orcid.org/0000-0002-2190-563X
dc.identifier.orcidhttps://orcid.org/0000-0001-6127-1056
mit.licensePUBLISHER_CCen_US


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