dc.contributor.author | Zhang, Wenhan | |
dc.contributor.author | West, Damien | |
dc.contributor.author | Lee, Seng Huat | |
dc.contributor.author | Qiu, Yunsheng | |
dc.contributor.author | Hor, Yew San | |
dc.contributor.author | Zhang, Shengbai | |
dc.contributor.author | Wu, Weida | |
dc.contributor.author | Chang, Cui-zu | |
dc.contributor.author | Moodera, Jagadeesh | |
dc.date.accessioned | 2018-10-19T19:48:18Z | |
dc.date.available | 2018-10-19T19:48:18Z | |
dc.date.issued | 2018-09 | |
dc.date.submitted | 2018-07 | |
dc.identifier.issn | 2469-9950 | |
dc.identifier.issn | 2469-9969 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/118629 | |
dc.description.abstract | By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb₂Te₃. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the codoped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V codoped TIs. | en_US |
dc.description.sponsorship | United States. Army Research Office (Award W911NF1810198) | en_US |
dc.publisher | American Physical Society | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevB.98.115165 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | American Physical Society | en_US |
dc.title | Electronic fingerprints of Cr and V dopants in the topological insulator Sb₂Te₃ | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Zhang, Wenhan et al. "Electronic fingerprints of Cr and V dopants in the topological insulator Sb₂Te₃." Physical Review B 98, 11 (September 2018): 115165 © 2018 American Physical Society | en_US |
dc.contributor.department | Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology) | en_US |
dc.contributor.mitauthor | Chang, Cui-zu | |
dc.contributor.mitauthor | Moodera, Jagadeesh | |
dc.relation.journal | Physical Review B | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dc.date.updated | 2018-09-28T18:00:27Z | |
dc.language.rfc3066 | en | |
dc.rights.holder | American Physical Society | |
dspace.orderedauthors | Zhang, Wenhan; West, Damien; Lee, Seng Huat; Qiu, Yunsheng; Chang, Cui-Zu; Moodera, Jagadeesh S.; Hor, Yew San; Zhang, Shengbai; Wu, Weida | en_US |
dspace.embargo.terms | N | en_US |
dc.identifier.orcid | https://orcid.org/0000-0001-7413-5715 | |
dc.identifier.orcid | https://orcid.org/0000-0002-2480-1211 | |
mit.license | PUBLISHER_POLICY | en_US |