Show simple item record

dc.contributor.authorZhang, Wenhan
dc.contributor.authorWest, Damien
dc.contributor.authorLee, Seng Huat
dc.contributor.authorQiu, Yunsheng
dc.contributor.authorHor, Yew San
dc.contributor.authorZhang, Shengbai
dc.contributor.authorWu, Weida
dc.contributor.authorChang, Cui-zu
dc.contributor.authorMoodera, Jagadeesh
dc.date.accessioned2018-10-19T19:48:18Z
dc.date.available2018-10-19T19:48:18Z
dc.date.issued2018-09
dc.date.submitted2018-07
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.urihttp://hdl.handle.net/1721.1/118629
dc.description.abstractBy combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb₂Te₃. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the codoped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V codoped TIs.en_US
dc.description.sponsorshipUnited States. Army Research Office (Award W911NF1810198)en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.98.115165en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleElectronic fingerprints of Cr and V dopants in the topological insulator Sb₂Te₃en_US
dc.typeArticleen_US
dc.identifier.citationZhang, Wenhan et al. "Electronic fingerprints of Cr and V dopants in the topological insulator Sb₂Te₃." Physical Review B 98, 11 (September 2018): 115165 © 2018 American Physical Societyen_US
dc.contributor.departmentFrancis Bitter Magnet Laboratory (Massachusetts Institute of Technology)en_US
dc.contributor.mitauthorChang, Cui-zu
dc.contributor.mitauthorMoodera, Jagadeesh
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2018-09-28T18:00:27Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsZhang, Wenhan; West, Damien; Lee, Seng Huat; Qiu, Yunsheng; Chang, Cui-Zu; Moodera, Jagadeesh S.; Hor, Yew San; Zhang, Shengbai; Wu, Weidaen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0001-7413-5715
dc.identifier.orcidhttps://orcid.org/0000-0002-2480-1211
mit.licensePUBLISHER_POLICYen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record