dc.contributor.author | Ekstrom, Kai E. | |
dc.contributor.author | Autruffe, Antoine | |
dc.contributor.author | Lai, Barry | |
dc.contributor.author | Stokkan, Gaute | |
dc.contributor.author | del Canizo, Carlos | |
dc.contributor.author | Castellanos, Sergio | |
dc.contributor.author | Jensen, Mallory Ann | |
dc.contributor.author | Morishige, Ashley Elizabeth | |
dc.contributor.author | Hofstetter, Jasmin | |
dc.contributor.author | Yen, Patricia | |
dc.contributor.author | Buonassisi, Anthony | |
dc.date.accessioned | 2018-11-06T18:04:09Z | |
dc.date.available | 2018-11-06T18:04:09Z | |
dc.date.issued | 2016-04 | |
dc.date.submitted | 2016-02 | |
dc.identifier.issn | 2156-3381 | |
dc.identifier.issn | 2156-3403 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/118926 | |
dc.description.abstract | In recent years, high-performance multicrystalline silicon (HPMC-Si) has emerged as an attractive alternative to traditional ingot-based multicrystalline silicon (mc-Si), with a similar cost structure but improved cell performance. Herein, we evaluate the gettering response of traditional mc-Si and HPMC-Si. Microanalytical techniques demonstrate that HPMC-Si and mc-Si share similar lifetime-limiting defect types but have different relative concentrations and distributions. HPMC-Si shows a substantial lifetime improvement after P-gettering compared with mc-Si, chiefly because of lower area fraction of dislocation-rich clusters. In both materials, the dislocation clusters and grain boundaries were associated with relatively higher interstitial iron point-defect concentrations after diffusion, which is suggestive of dissolving metal-impurity precipitates. The relatively fewer dislocation clusters in HPMC-Si are shown to exhibit similar characteristics to those found in mc-Si. Given similar governing principles, a proxy to determine relative recombination activity of dislocation clusters developed for mc-Si is successfully transferred to HPMC-Si. The lifetime in the remainder of HPMC-Si material is found to be limited by grain-boundary recombination. To reduce the recombination activity of grain boundaries in HPMC-Si, coordinated impurity control during growth, gettering, and passivation must be developed. Keywords: Defects; dislocation recombination activity; dislocations; eccentricity variation; high-performance multicrystalline silicon (HPMC-Si); minority-carrier lifetime; photovoltaics; recombination; synchrotron | en_US |
dc.description.sponsorship | United States. Department of Energy (Contract EEC-1041895) | en_US |
dc.description.sponsorship | National Science Foundation (U.S.) (Contract EEC-1041895) | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/JPHOTOV.2016.2540246 | en_US |
dc.rights | Creative Commons Attribution-Noncommercial-Share Alike | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/4.0/ | en_US |
dc.source | Other repository | en_US |
dc.title | High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Castellanos, Sergio et al. “High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects.” IEEE Journal of Photovoltaics 6, 3 (May 2016): 632–640 © 2016 IEEE | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Mechanical Engineering | en_US |
dc.contributor.mitauthor | Castellanos, Sergio | |
dc.contributor.mitauthor | Jensen, Mallory Ann | |
dc.contributor.mitauthor | Morishige, Ashley Elizabeth | |
dc.contributor.mitauthor | Hofstetter, Jasmin | |
dc.contributor.mitauthor | Yen, Patricia | |
dc.contributor.mitauthor | Buonassisi, Anthony | |
dc.relation.journal | IEEE Journal of Photovoltaics | en_US |
dc.eprint.version | Author's final manuscript | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dc.date.updated | 2018-11-01T14:40:35Z | |
dspace.orderedauthors | Castellanos, Sergio; Ekstrom, Kai E.; Autruffe, Antoine; Jensen, Mallory A.; Morishige, Ashley E.; Hofstetter, Jasmin; Yen, Patricia; Lai, Barry; Stokkan, Gaute; del Canizo, Carlos; Buonassisi, Tonio | en_US |
dspace.embargo.terms | N | en_US |
dc.identifier.orcid | https://orcid.org/0000-0003-3935-6701 | |
dc.identifier.orcid | https://orcid.org/0000-0002-5353-0780 | |
dc.identifier.orcid | https://orcid.org/0000-0001-9352-8741 | |
dc.identifier.orcid | https://orcid.org/0000-0002-4040-6705 | |
dc.identifier.orcid | https://orcid.org/0000-0001-8345-4937 | |
mit.license | OPEN_ACCESS_POLICY | en_US |