dc.contributor.author | Dastgheib-Shirazi, Amir | |
dc.contributor.author | Min, Byungsul | |
dc.contributor.author | Steyer, Michael | |
dc.contributor.author | Hahn, Giso | |
dc.contributor.author | del Cañizo, Carlos | |
dc.contributor.author | Altermatt, Pietro P. | |
dc.contributor.author | Wagner, Hannes | |
dc.contributor.author | Morishige, Ashley Elizabeth | |
dc.contributor.author | Buonassisi, Anthony | |
dc.date.accessioned | 2018-11-09T19:44:14Z | |
dc.date.available | 2018-11-09T19:44:14Z | |
dc.date.issued | 2016-05 | |
dc.date.submitted | 2015-11 | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.issn | 1089-7550 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/118983 | |
dc.description.abstract | The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl₃ source, is widely used as a dopant source in the manufacturing of crystalline silicon solar cells. Although it has been a widely addressed research topic for a long time, there is still lack of a comprehensive understanding of aspects such as the growth, the chemical composition, possible phosphorus depletion, the resulting in-diffused phosphorus profiles, the gettering behavior in silicon, and finally the metal-contact formation. This paper addresses these different aspects simultaneously to further optimize process conditions for photovoltaic applications. To do so, a wide range of experimental data is used and combined with device and process simulations, leading to a more comprehensive interpretation. The results show that slight changes in the PSG process conditions can produce high-quality emitters. It is predicted that PSG processes at 860 °C for 60 min in combination with an etch-back and laser doping from PSG layer results in high-quality emitters with a peak dopant density N[subscript peak] = 8.0 × 10¹⁸cm⁻³ and a junction depth dj= 0.4 μm, resulting in a sheet resistivity ρ[subscript sh] = 380 Ω/sq and a saturation current-density J₀below 10 fA/cm². With these properties, the POCl₃ process can compete with ion implantation or doped oxide approaches. | en_US |
dc.description.sponsorship | National Science Foundation (U.S.) (Contract EEC-1041895) | en_US |
dc.description.sponsorship | United States. Department of Energy (Contract EEC-1041895) | en_US |
dc.description.sponsorship | United States. Department of Energy (Award DE-EE0006335) | en_US |
dc.publisher | American Institute of Physics (AIP) | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.4949326 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | Other repository | en_US |
dc.title | Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Wagner, Hannes et al. “Optimizing Phosphorus Diffusion for Photovoltaic Applications: Peak Doping, Inactive Phosphorus, Gettering, and Contact Formation.” Journal of Applied Physics 119, 18 (May 2016): 185704 © 2016 Author(s) | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Mechanical Engineering | en_US |
dc.contributor.mitauthor | Wagner, Hannes | |
dc.contributor.mitauthor | Morishige, Ashley Elizabeth | |
dc.contributor.mitauthor | Buonassisi, Anthony | |
dc.relation.journal | Journal of Applied Physics | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dc.date.updated | 2018-11-02T15:01:19Z | |
dspace.orderedauthors | Wagner, Hannes; Dastgheib-Shirazi, Amir; Min, Byungsul; Morishige, Ashley E.; Steyer, Michael; Hahn, Giso; del Cañizo, Carlos; Buonassisi, Tonio; Altermatt, Pietro P. | en_US |
dspace.embargo.terms | N | en_US |
dc.identifier.orcid | https://orcid.org/0000-0001-9352-8741 | |
dc.identifier.orcid | https://orcid.org/0000-0001-8345-4937 | |
mit.license | PUBLISHER_POLICY | en_US |