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The effect of shallow vs. deep level doping on the performance of thermoelectric materials

Author(s)
Broido, David; Ren, Zhifeng; Song, Qichen; Zhou, Jiawei; Meroueh, Laureen; Chen, Gang; ... Show more Show less
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Download402. Appl. Phys. Lett. 109, 263902 (2016).pdf (788.6Kb)
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Abstract
It is well known that the efficiency of a good thermoelectric material should be optimized with respect to doping concentration. However, much less attention has been paid to the optimization of the dopant's energy level. Thermoelectric materials doped with shallow levels may experience a dramatic reduction in their figures of merit at high temperatures due to the excitation of minority carriers that reduces the Seebeck coefficient and increases bipolar heat conduction. Doping with deep level impurities can delay the excitation of minority carriers as it requires a higher temperature to ionize all dopants. We find through modeling that, depending on the material type and temperature range of operation, different impurity levels (shallow or deep) will be desired to optimize the efficiency of a thermoelectric material. For different materials, we further clarify where the most preferable position of the impurity level within the bandgap falls. Our research provides insight on why different dopants often affect thermoelectric transport properties differently and directions in searching for the most appropriate dopants for a thermoelectric material in order to maximize the device efficiency.
Date issued
2016-12
URI
http://hdl.handle.net/1721.1/118992
Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Song, Qichen et al. “The Effect of Shallow Vs. Deep Level Doping on the Performance of Thermoelectric Materials.” Applied Physics Letters 109, 26 (December 2016): 263902 © 2016 Author(s)
Version: Final published version
ISSN
0003-6951
1077-3118

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