MIT Libraries logoDSpace@MIT

MIT
View Item 
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Author(s)
Vahanissi, Ville; Liu, Zhengjun; Huang, Haibing; Magana, Ernesto; Khelifati, Nabil; Husein, Sebastian; Lai, Barry; Bouhafs, Djoudi; Laine, Hannu; Morishige, Ashley Elizabeth; Bertoni, Mariana I; Buonassisi, Anthony; Fenning, David P; Savin, Hele Irene; ... Show more Show less
Thumbnail
DownloadFinite-vs.infinite-sourceemittersinsiliconphotovoltaicsEffect-IEEEPVSC2016_proceeding.pdf (1017.Kb)
OPEN_ACCESS_POLICY

Open Access Policy

Creative Commons Attribution-Noncommercial-Share Alike

Terms of use
Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/
Metadata
Show full item record
Abstract
Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.
Date issued
2016-06
URI
http://hdl.handle.net/1721.1/119178
Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Journal
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Laine, Hannu S., Ville Vahanissi, Zhengjun Liu, Haibing Huang, Ernesto Magana, Ashley E. Morishige, Nabil Khelifati, et al. “Finite- Vs. Infinite-Source Emitters in Silicon Photovoltaics: Effect on Transition Metal Gettering.” 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) (June 2016).
Version: Author's final manuscript
ISBN
978-1-5090-2724-8

Collections
  • MIT Open Access Articles

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

My Account

Login

Statistics

OA StatisticsStatistics by CountryStatistics by Department
MIT Libraries
PrivacyPermissionsAccessibilityContact us
MIT
Content created by the MIT Libraries, CC BY-NC unless otherwise noted. Notify us about copyright concerns.