Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering
Author(s)Vahanissi, Ville; Liu, Zhengjun; Huang, Haibing; Magana, Ernesto; Khelifati, Nabil; Husein, Sebastian; Lai, Barry; Bouhafs, Djoudi; Laine, Hannu; Morishige, Ashley Elizabeth; Bertoni, Mariana I; Buonassisi, Anthony; Fenning, David P; Savin, Hele Irene; ... Show more Show less
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Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.
DepartmentMassachusetts Institute of Technology. Department of Mechanical Engineering
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Institute of Electrical and Electronics Engineers (IEEE)
Laine, Hannu S., Ville Vahanissi, Zhengjun Liu, Haibing Huang, Ernesto Magana, Ashley E. Morishige, Nabil Khelifati, et al. “Finite- Vs. Infinite-Source Emitters in Silicon Photovoltaics: Effect on Transition Metal Gettering.” 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) (June 2016).
Author's final manuscript