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dc.contributor.authorPolsen, Erik S.
dc.contributor.authorLi, Jinjing
dc.contributor.authorBedewy, Mostafa
dc.contributor.authorWhite, Alvin Orbaek
dc.contributor.authorTawfick, Sameh H.
dc.contributor.authorHart, Anastasios John
dc.date.accessioned2018-12-03T14:00:43Z
dc.date.available2018-12-03T14:00:43Z
dc.date.issued2016-05
dc.identifier.issn1932-7447
dc.identifier.issn1932-7455
dc.identifier.urihttp://hdl.handle.net/1721.1/119379
dc.description.abstractConsistent synthesis of carbon nanotubes (CNTs) using laboratory-scale methods is essential to the development of commercial applications, particularly with respect to the verification of recipes that achieve control of CNT diameter, chirality, alignment, and density. Here, we report that transients in the moisture level and carbon concentration during the chemical vapor deposition (CVD) process for vertically aligned CNT forests can contribute significantly to run-to-run variation of height and density. Then, we show that highly consistent CNT forest growth can be achieved by physically decoupling the catalyst annealing and hydrocarbon exposure steps, to allow the gas composition to stabilize between the steps. This decoupling is achieved using a magnetically actuated transfer arm to move the substrate rapidly into and out of the CVD reactor. Compared to a reference process where the sample resides in the furnace throughout the process, the decoupled method gives 21% greater CNT forest height, reduces the run-to-run variance of height by 76%, and results in forests with improved vertical alignment (Herman's orientation parameter of 0.68 compared to 0.50). Building on this foundation, we study the influence of the moisture level during the CNT growth step and find a 30% improvement in growth rate going from the baseline condition (<15 ppm) to 40 ppm. Interestingly, however, the increased moisture concentration does not improve the catalyst lifetime or the CNT forest density, warranting further study of the role of moisture on CNT nucleation versus growth.en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Science and Technology Center (DMR-1120187)en_US
dc.description.sponsorshipPall Corporationen_US
dc.description.sponsorshipUnited States. Office of Naval Research. Young Investigator Program (N000141210815)en_US
dc.description.sponsorshipNational Science Foundation (U.S.)en_US
dc.description.sponsorshipNational Institutes of Health (U.S.) (Grant No. DMR-0225180)en_US
dc.publisherAmerican Chemical Society (ACS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/ACS.JPCC.6B02878en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceOther repositoryen_US
dc.titleHighly Consistent Atmospheric Pressure Synthesis of Carbon Nanotube Forests by Mitigation of Moisture Transientsen_US
dc.typeArticleen_US
dc.identifier.citationLi, Jinjing, Mostafa Bedewy, Alvin Orbaek White, Erik S. Polsen, Sameh Tawfick, and A. John Hart. “Highly Consistent Atmospheric Pressure Synthesis of Carbon Nanotube Forests by Mitigation of Moisture Transients.” The Journal of Physical Chemistry C 120, no. 20 (May 17, 2016): 11277–11287.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.mitauthorLi, Jinjing
dc.contributor.mitauthorBedewy, Mostafa
dc.contributor.mitauthorWhite, Alvin Orbaek
dc.contributor.mitauthorTawfick, Sameh H.
dc.contributor.mitauthorHart, Anastasios John
dc.relation.journalThe Journal of Physical Chemistry Cen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2018-11-29T18:06:35Z
dspace.orderedauthorsLi, Jinjing; Bedewy, Mostafa; White, Alvin Orbaek; Polsen, Erik S.; Tawfick, Sameh; Hart, A. Johnen_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0003-4182-7533
dc.identifier.orcidhttps://orcid.org/0000-0002-7372-3512
mit.licensePUBLISHER_POLICYen_US


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