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Fluid-structure interaction in the cerebral venous sinus

Author(s)
Heldt, Thomas
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Abstract
The biomechanics of the cerebral venous system plays an important role in determining blood flow to the brain. Computational approaches to help elucidate the role of the cerebral venous system in health and disease have largely focused on lumped-parameter models and one-dimensional computational fluid dynamics simulations. To expand upon the prior work, and to investigate the possible role of cerebral venous collapse in normal physiology and pathological conditions, we developed a fluid-structure interaction (FSI) model of the cerebral venous transverse sinus (TS), coupled to a lumpedparameter representation of the upstream cerebral circulation to provide boundary conditions for the FSI simulation. We simulated the effects of local venous hemodynamics on the TS distention and investigated TS vascular collapse under increased intracranial pressure, as has been hypothesized in the pathogenesis of idiopathic intracranial hypertension. Our baseline simulations reproduced pressures and flows in the cerebral venous system that compared favorably with what has been reported in the literature. The FSI simulations under increased intracranial pressure showed a decreased venous flow through and progressive collapse of the TS veins. Our simulations captured the dynamic behavior of the vascular collapse and may help shed light on the interactions between the cerebrovascular and cerebrospinal fluid spaces in health and disease.
Date issued
2018-07
URI
http://hdl.handle.net/1721.1/119433
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
Proceedings of the 40th International Conference of the IEEE Engineering in Medicine and Biology Society
Publisher
IEEE
Citation
Shim, Eun Bo, and Thomas Heldt. "Fluid-structure Interaction in the Cerebral Venous Transverse Sinus." Proceedings of the 40th International Conference of the IEEE Engineering in Medicine and Biology Society, 17-21 July, 2018, Honolulu, Hawaii, IEEE, 2018.
Version: Author's final manuscript

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