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Calculating the band structure of 3C-SiC using sp[superscript 3]d[superscript 5]s* + ∆ model

Author(s)
Onen, Murat; Turchetti, Marco
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Abstract
We report on a semiempirical tight-binding model for 3C-SiC including the effect of sp[superscript 3]d[superscript 5]s* orbitals and spin–orbit coupling (∆). In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on Slater–Koster integrals, and we explain the optimization method used to fit the experimental results with such a model. This method shows high accuracy for the evaluation of 3C-SiC band diagram in terms of both the experimental energy levels at high symmetry points and the effective masses. Keywords: Semiempirical tight-binding, Electronic band structure, SiC
Date issued
2019-02
URI
http://hdl.handle.net/1721.1/121027
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systems
Journal
Journal of Theoretical and Applied Physics
Publisher
Springer Berlin Heidelberg
Citation
Onen, Murat, and Marco Turchetti. “Calculating the Band Structure of 3C-SiC Using Sp[superscript 3]d[superscript 5]s* + ∆ Model.” Journal of Theoretical and Applied Physics 13, no. 1 (February 28, 2019): 1–6. © 2019 The Authors
Version: Final published version
ISSN
2251-7227
2251-7235

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