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Thermoelectric Properties of n-type ZrNiPb-Based Half-Heuslers

Author(s)
Mao, Jun; Zhou, Jiawei; Zhu, Hangtian; Liu, Zihang; Zhang, Hao; He, Ran; Chen, Gang; Ren, Zhifeng; ... Show more Show less
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Abstract
Here we investigate the half-Heusler ZrNiPb as a n-type thermoelectric material. Our results show that the n-type ZrNiPb-based materials can achieve high peak power factors, ∼50 μW cm⁻¹ K⁻², by optimally tuning the carrier concentration via Bi doping. By further Sn-alloying in Pb site, we achieve a significant reduction of lattice thermal conductivity while maintaining the power factor almost unchanged and hence noticeably improve the ZT. Our work demonstrates that n-type ZrNiPb-based half-Heuslers are promising thermoelectric materials.
Date issued
2017-01
URI
https://hdl.handle.net/1721.1/121415
Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Journal
Chemistry of Materials
Publisher
American Chemical Society (ACS)
Citation
Mao, Jun et al. "Thermoelectric Properties of n-type ZrNiPb-Based Half-Heuslers." Chemistry of Materials 29, 2 (January 2017): 867-872 © 2017 American Chemical Society
ISSN
0897-4756
1520-5002

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