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dc.contributor.authorLeong, Wei Sun
dc.contributor.authorWang, Haozhe
dc.contributor.authorYeo, Jingjie
dc.contributor.authorMartin-Martinez, Francisco J.
dc.contributor.authorZubair, Ahmad
dc.contributor.authorShen, Pin-Chun
dc.contributor.authorMao, Yunwei
dc.contributor.authorPalacios, Tomas
dc.contributor.authorBuehler, Markus J
dc.contributor.authorHong, Jin-Yong
dc.contributor.authorKong, Jing
dc.date.accessioned2019-06-27T12:52:58Z
dc.date.available2019-06-27T12:52:58Z
dc.date.issued2019-02
dc.identifier.issn2041-1723
dc.identifier.urihttps://hdl.handle.net/1721.1/121425
dc.description.abstractThe performance and reliability of large-area graphene grown by chemical vapor deposition are often limited by the presence of wrinkles and the transfer-process-induced polymer residue. Here, we report a transfer approach using paraffin as a support layer, whose thermal properties, low chemical reactivity and non-covalent affinity to graphene enable transfer of wrinkle-reduced and clean large-area graphene. The paraffin-transferred graphene has smooth morphology and high electrical reliability with uniform sheet resistance with ~1% deviation over a centimeter-scale area. Electronic devices fabricated on such smooth graphene exhibit electrical performance approaching that of intrinsic graphene with small Dirac points and high carrier mobility (hole mobility = 14,215 cm 2 V −1 s −1 ; electron mobility = 7438 cm 2 V −1 s −1 ), without the need of further annealing treatment. The paraffin-enabled transfer process could open realms for the development of high-performance ubiquitous electronics based on large-area two-dimensional materials.en_US
dc.description.sponsorshipUnited States. Office of Naval Research. Multidisciplinary University Research Initiative (Grant no. FA9550-15-1-0514)en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Division of Materials Research. Electrical, Communications and Cyber Systems (1509197)en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Center for Energy Efficient Electronics Science (NSF Award 0939514)en_US
dc.description.sponsorshipKing Abdullah University of Science and Technology (No. OSR- 2015-CRG4-2634)en_US
dc.description.sponsorshipUnited States. Army Research Office (through MIT Institute for Soldier Nanotechnologies (Grant No. 023674))en_US
dc.description.sponsorshipKorea Research Institute of Chemical Technology (project no. KK1801-G01)en_US
dc.description.sponsorshipNational Research Foundation of Korea. Basic Science Research Program (NRF-2017R1C1B2007153)en_US
dc.description.sponsorshipUnited States. Office of Naval Research (N00014–16–1–233)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (grant number ACI-1053575)en_US
dc.description.sponsorshipSingapore. Agency for Science, Technology and Research. Computational Resource Centreen_US
dc.description.sponsorshipSingapore. National Supercomputing Centreen_US
dc.language.isoen
dc.publisherNature Publishing Groupen_US
dc.relation.isversionof10.1038/S41467-019-08813-Xen_US
dc.rightsCreative Commons Attribution 4.0 International licenseen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceNatureen_US
dc.titleParaffin-enabled graphene transferen_US
dc.typeArticleen_US
dc.identifier.citationLeong, Wei Sun, Haozhe Wang, Jingjie Yeo, Francisco J. Martin-Martinez, Ahmad Zubair, Pin-Chun Shen, Yunwei Mao, Tomas Palacios, Markus J. Buehler, Jin-Yong Hong & Jing Kong. "Paraffin-enabled graphene transfer." Nature Communications 10:1 (2019):867.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.relation.journalNature Communicationsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2019-06-26T18:32:23Z
dspace.date.submission2019-06-26T18:32:24Z
mit.journal.volume10en_US
mit.journal.issue1en_US


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