In Situ-Generated Volatile Precursor for CVD Growth of a Semimetallic 2D Dichalcogenide
Author(s)
Gao, Zhenfei; Ji, Qingqing; Shen, Pin-Chun; Han, Yimo; Leong, Wei Sun; Mao, Nannan; Zhou, Lin; Su, Cong; Niu, Jin; Ji, Xiang; Goulamaly, Mahomed Mehdi; Muller, David A.; Li, Yongfeng; Kong, Jing; ... Show more Show less
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Semimetallic-layered transition-metal dichalcogenides, such as TiS2, can serve as a platform material for exploring novel physics modulated by dimensionality, as well as for developing versatile applications in electronics and thermoelectrics. However, controlled synthesis of ultrathin TiS2 in a dry-chemistry way has yet to be realized because of the high oxophilicity of active Ti precursors. Here, we report the ambient pressure chemical vapor deposition (CVD) method to grow large-size, highly crystalline two-dimensional (2D) TiS2 nanosheets through in situ generating titanium chloride as the gaseous precursor. The addition of NH4Cl promoter can react with Ti powders and switch the solid-phase sulfurization reaction into a CVD process, thus enabling the controllability over the size, shape, and thickness of the TiS2 nanosheets via tuning the synthesis conditions. Interestingly, this semimetallic 2D material exhibits near-infrared surface plasmon resonance absorption and a memristor-like electrical behavior, both holding promise for further application developments. Our method hence opens a new avenue for the CVD growth of 2D metal dichalcogenides directly from metal powders and pave the way for exploring their intriguing properties and applications.
Date issued
2018-09Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Research Laboratory of Electronics; Massachusetts Institute of Technology. Department of Nuclear Science and EngineeringJournal
ACS Applied Materials & Interfaces
Publisher
American Chemical Society (ACS)
Citation
Gao, Zhenfei et al. "In Situ-Generated Volatile Precursor for CVD Growth of a Semimetallic 2D Dichalcogenide." ACS Applied Materials & Interfaces 10, 40 (September 2018): 34401-34408 © 2018 American Chemical Society
Version: Author's final manuscript
ISSN
1944-8244
1944-8252