dc.contributor.author | Hui, Fei | |
dc.contributor.author | Fang, Wenjing | |
dc.contributor.author | Leong, Wei Sun | |
dc.contributor.author | Kpulum, Tewa | |
dc.contributor.author | Wang, Haozhe | |
dc.contributor.author | Yang, Hui Ying | |
dc.contributor.author | Villena, Marco A. | |
dc.contributor.author | Harris, Gary | |
dc.contributor.author | Kong, Jing | |
dc.contributor.author | Lanza, Mario | |
dc.date.accessioned | 2019-07-05T14:28:59Z | |
dc.date.available | 2019-07-05T14:28:59Z | |
dc.date.issued | 2017-11 | |
dc.date.submitted | 2017-07 | |
dc.identifier.issn | 1944-8244 | |
dc.identifier.issn | 1944-8252 | |
dc.identifier.uri | https://hdl.handle.net/1721.1/121494 | |
dc.description.abstract | Large-area hexagonal boron nitride (h-BN) can be grown on polycrystalline metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Conductive atomic force microscopy (CAFM) and probe station characterization show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one substrate (Pt) grain to another. Interestingly, the variability in the tunneling current across the h-BN within the same substrate grain is very low, which may enable the use of CVD-grown h-BN in ultra scaled technologies. Keywords: hexagonal boron nitride; chemical vapor deposition; electrical homogeneity; conductive AFM; polycrystalline | en_US |
dc.description.sponsorship | National Science Foundation (U.S.) (Grant DMR/ECCS–1509197) | en_US |
dc.language.iso | en | |
dc.publisher | American Chemical Society (ACS) | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1021/ACSAMI.7B09417 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | arXiv | en_US |
dc.title | Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Hui, Fei et al. "Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets." ACS Applied Materials & Interfaces 9, 46 (November 2017): 39895-39900 © 2017 American Chemical Society | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.relation.journal | ACS Applied Materials & Interfaces | en_US |
dc.eprint.version | Original manuscript | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/NonPeerReviewed | en_US |
dc.date.updated | 2019-06-26T17:41:18Z | |
dspace.date.submission | 2019-06-26T17:41:19Z | |
mit.journal.volume | 9 | en_US |
mit.journal.issue | 46 | en_US |