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dc.contributor.authorHui, Fei
dc.contributor.authorFang, Wenjing
dc.contributor.authorLeong, Wei Sun
dc.contributor.authorKpulum, Tewa
dc.contributor.authorWang, Haozhe
dc.contributor.authorYang, Hui Ying
dc.contributor.authorVillena, Marco A.
dc.contributor.authorHarris, Gary
dc.contributor.authorKong, Jing
dc.contributor.authorLanza, Mario
dc.date.accessioned2019-07-05T14:28:59Z
dc.date.available2019-07-05T14:28:59Z
dc.date.issued2017-11
dc.date.submitted2017-07
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.urihttps://hdl.handle.net/1721.1/121494
dc.description.abstractLarge-area hexagonal boron nitride (h-BN) can be grown on polycrystalline metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Conductive atomic force microscopy (CAFM) and probe station characterization show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one substrate (Pt) grain to another. Interestingly, the variability in the tunneling current across the h-BN within the same substrate grain is very low, which may enable the use of CVD-grown h-BN in ultra scaled technologies. Keywords: hexagonal boron nitride; chemical vapor deposition; electrical homogeneity; conductive AFM; polycrystallineen_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant DMR/ECCS–1509197)en_US
dc.language.isoen
dc.publisherAmerican Chemical Society (ACS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/ACSAMI.7B09417en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourcearXiven_US
dc.titleElectrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheetsen_US
dc.typeArticleen_US
dc.identifier.citationHui, Fei et al. "Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets." ACS Applied Materials & Interfaces 9, 46 (November 2017): 39895-39900 © 2017 American Chemical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.relation.journalACS Applied Materials & Interfacesen_US
dc.eprint.versionOriginal manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dc.date.updated2019-06-26T17:41:18Z
dspace.date.submission2019-06-26T17:41:19Z
mit.journal.volume9en_US
mit.journal.issue46en_US


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