N-polar AlN buffer growth by MOVPE for transistor applications
Author(s)Lemettinen, Jori; Okumura, Hironori; Palacios, Tomas
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We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high buffer leakage current. The silicon concentration decreases from 2 × 1018 to 9 × 1015 cm-3 with decreasing growth temperature, reducing the buffer leakage current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 × 104 owing to the low leakage of AlN buffer layers.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Applied Physics Express
Japan Society of Applied Physics
Lemettinen, Jori, Hironori Okumura, Tomás Palacios and Sami Suihkonen. "N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications." Applied Physics Express 11 (2018).
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