MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
Author(s)Lemettinen, Jori; Okumura, Hironori; Palacios, Tomas
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We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Journal of Crystal Growth
Lemettinen, J., H. Okumura, I, Kim, M. Rudzinski, J. Grzonka, T. Palacios and S. Suihkonen. "MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC." Journal of Crystal Growth 487, no. 1 (April 2018): pages 50-56 © 2018 The Author(s)
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