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dc.contributor.authorHoerantner, Maximilian T
dc.contributor.authorWassweiler, Ella Louise
dc.contributor.authorZhang, Haomiao
dc.contributor.authorPanda, Anurag
dc.contributor.authorNasilowski, Michel
dc.contributor.authorOsherov-Beizerov, Anna
dc.contributor.authorSwartwout, Richard M
dc.contributor.authorDriscoll, Aidan E.
dc.contributor.authorMoody, Nicole Susanne
dc.contributor.authorBawendi, Moungi G.
dc.contributor.authorJensen, Klavs F
dc.contributor.authorBulovic, Vladimir
dc.date.accessioned2019-09-23T17:15:48Z
dc.date.available2019-09-23T17:15:48Z
dc.date.issued2019-08
dc.date.submitted2019-05
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.urihttps://hdl.handle.net/1721.1/122275
dc.description.abstractIntensive research of hybrid metal-halide perovskite materials for use as photoactive materials has resulted in an unmatched increase in the power conversion efficiency of perovskite photovoltaics (PVs) over the last couple of years. Now that lab-fabricated perovskite devices rival the efficiency of silicon PVs, the next challenge of scalable mass manufacturing of large perovskite PV panels remains to be solved. For that purpose, it is still unclear which manufacturing method will provide the lowest processing cost and highest quality solar cells. Vapor deposition has been proven to work well for perovskites as a controllable and repeatable thin-film deposition technique but with processing speeds currently too slow to adequately lower the production costs. Addressing this challenge, in the present work, we demonstrate a high-speed vapor transport processing technique in a custom-built reactor that produces high-quality perovskite films with unprecedented deposition speed exceeding 1 nm/s, over 10× faster than previous vapor deposition demonstrations. We show that the semiconducting perovskite films produced with this method have excellent crystallinity and optoelectronic properties with 10 ns charge carrier lifetime, enabling us to fabricate the first photovoltaic devices made by perovskite vapor transport deposition. Our experiments are guided by computational fluid dynamics simulations that also predict that this technique could lead to deposition rates on the order of micrometers per second. This, in turn, could enable cost-effective scalable manufacturing of the perovskite-based solar technologies. Keywords: solar cells; perovskite; thin-film; vapor deposition; manufacturing; fluid dynamicsen_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Award 1541959)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant 1605406)en_US
dc.language.isoen
dc.publisherAmerican Chemical Society (ACS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/acsami.9b07651en_US
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivs Licenseen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en_US
dc.sourceACSen_US
dc.titleHigh-Speed Vapor Transport Deposition of Perovskite Thin Filmsen_US
dc.typeArticleen_US
dc.identifier.citationHoerantner, Maximilian et al. "High-Speed Vapor Transport Deposition of Perovskite Thin Films." ACS Applied Materials & Interfaces 11, 36 (August 2019): 32928-32936 © 2019 American Chemical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemistryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.relation.journalACS Applied Materials & Interfacesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2019-09-20T14:26:03Z
dspace.date.submission2019-09-20T14:26:06Z
mit.journal.volume11en_US
mit.journal.issue36en_US


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