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Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

Author(s)
Sasangka, W.A.; Gao, Y.; Gan, C.L.; Thompson, Carl Vernette
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Creative Commons Attribution-NonCommercial-NoDerivs License http://creativecommons.org/licenses/by-nc-nd/4.0/
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Abstract
We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Schottky barrier height of bad devices (0.4 < ϕ[subscript B0] < 0.62 eV) was found to be lower than that of the good devices (ϕB0 = 0.79 eV). From transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) analysis, we found that this difference is due to the presence of carbon impurities in the nickel layer in the gate region. Keywords: AlGaN/GaN HEMTs; Leakage current; Carbon impurities; TEM; EELS; Schottky barrier height
Date issued
2018-09
URI
https://hdl.handle.net/1721.1/122777
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Microelectronics Reliability
Publisher
Elsevier BV
Citation
Sasangka, W.A.et al. "Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors." Microelectronics Reliability, 88-90 (September 2018): 393-396 © 2018 Elsevier Ltd
Version: Author's final manuscript
ISSN
0026-2714
1872-941X

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