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dc.contributor.authorYang, Rachel S.(Rachel Shanting)
dc.contributor.authorHanson, Alex Jordan
dc.contributor.authorPerreault, David J.
dc.contributor.authorSullivan, Charles R.
dc.date.accessioned2020-01-21T20:45:37Z
dc.date.available2020-01-21T20:45:37Z
dc.date.issued2018-04
dc.date.submitted2018-03
dc.identifier.isbn9781538611807
dc.identifier.issn2470-6647
dc.identifier.urihttps://hdl.handle.net/1721.1/123505
dc.description.abstractOperation in the HF regime (3-30 MHz) has shown potential for miniaturizing power electronics, but substantial challenges in the design of efficient miniaturized inductors at HF remain. At these frequencies, losses due to skin and proximity effects are difficult to reduce, and gaps needed to keep B fields low in the core add fringing field loss. We propose a low-loss inductor structure suitable for small, highly efficient inductors at HF and introduce step-by-step design guidelines for the geometry. An example ∼ 15 μΗ inductor designed using these guidelines achieved an experimental quality factor of 620 at 3 MHz and 2 A (peak) of ac current. We further demonstrate the low loss of the inductor in a high-current-swing power converter operated at 1-3 MHz; at 250 W, the inductor improved converter efficiency by 1.2 %, compared to a conventional inductor design. Thus, we show that the proposed inductor geometry and design guidelines can reduce losses and thereby help realize high frequency miniaturization of power electronics.en_US
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/apec.2018.8341070en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceProf. Perreault via Phoebe Ayersen_US
dc.titleA low-loss inductor structure and design guidelines for high-frequency applicationsen_US
dc.typeArticleen_US
dc.identifier.citationYang, Rachel S. et al. "A low-loss inductor structure and design guidelines for high-frequency applications." 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), March 2018, San Antonio, Texas, USA, Institute of Electrical and Electronics Engineers (IEEE), April 2018 © 2018 IEEEen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.relation.journal2018 IEEE Applied Power Electronics Conference and Exposition (APEC)en_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dc.date.updated2020-01-15T19:18:41Z
dspace.date.submission2020-01-15T19:18:43Z
mit.metadata.statusComplete


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