Integrated CMOS-compatible Q-switched mode-locked lasers at 1900nm with an on-chip artificial saturable absorber
Author(s)
Shtyrkova, Katia; Callahan, Patrick T.; Li, Nanxi; Magden, Emir Salih; Ruocco, Alfonso; Vermeulen, Diedrik Rene Georgette; Kaertner, Franz X; Watts, Michael; Ippen, Erich Peter; ... Show more Show less
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We present a CMOS-compatible, Q-switched mode-locked integrated laser operating at 1.9 µm with a compact footprint of 23.6 × 0.6 × 0.78mm. The Q-switching rate is 720 kHz, the mode-locking rate is 1.2 GHz, and the optical bandwidth is 17nm, which is sufficient to support pulses as short as 215 fs. The laser is fabricated using a silicon nitride on silicon dioxide 300-mm wafer platform, with thulium-doped Al[subscript 2]O[subscript 3] glass as a gain material deposited over the silicon photonics chip. An integrated Kerr-nonlinearity-based artificial saturable absorber is implemented in silicon nitride. A broadband (over 100 nm) dispersion-compensating grating in silicon nitride provides sufficient anomalous dispersion to compensate for the normal dispersion of the other laser components, enabling femtosecond-level pulses. The laser has no off-chip components with the exception of the optical pump, allowing for easy co-integration of numerous other photonic devices such as supercontinuum generation and frequency doublers which together potentially enable fully on-chip frequency comb generation.
Date issued
2019-02Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Lincoln Laboratory; Massachusetts Institute of Technology. Research Laboratory of ElectronicsJournal
Optics Express
Publisher
The Optical Society
Citation
Shtyrkova, Katia, et al. “Integrated CMOS-Compatible Q-Switched Mode-Locked Lasers at 1900nm with an on-Chip Artificial Saturable Absorber.” Optics Express 27, 3 (February 2019): 3542 © 2019 Optical Society of America
Version: Final published version
ISSN
1094-4087