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dc.contributor.authorMa, Qiong
dc.contributor.authorXu, Su-Yang
dc.contributor.authorFu, Liang
dc.date.accessioned2020-04-01T12:38:22Z
dc.date.available2020-04-01T12:38:22Z
dc.date.issued2019-06-13
dc.identifier.issn0027-8424
dc.identifier.issn1091-6490
dc.identifier.urihttps://hdl.handle.net/1721.1/124469
dc.description.abstractBismuth-based materials have been instrumental in the development of topological physics, even though bulk bismuth itself has been long thought to be topologically trivial. A recent study has, however, shown that bismuth is in fact a higher-order topological insulator featuring one-dimensional (1D) topological hinge states protected by threefold rotational and inversion symmetries. In this paper, we uncover another hidden facet of the band topology of bismuth by showing that bismuth is also a first-order topological crystalline insulator protected by a twofold rotational symmetry. As a result, its (110) ¯ surface exhibits a pair of gapless Dirac surface states. Remarkably, these surface Dirac cones are “unpinned” in the sense that they are not restricted to locate at specific k points in the (110) ¯ surface Brillouin zone. These unpinned 2D Dirac surface states could be probed directly via various spectroscopic techniques. Our analysis also reveals the presence of a distinct, previously uncharacterized set of 1D topological hinge states protected by the twofold rotational symmetry. Our study thus provides a comprehensive understanding of the topological band structure of bismuth.en_US
dc.description.sponsorshipChina. Ministry of Science and Technology (Grant MOST107-2627-E-006-001)en_US
dc.description.sponsorshipUnited States. Department of Energy. Division of Materials Sciences and Engineering (Award DE-SC0018945)en_US
dc.description.sponsorshipUnited States. Department of Energy. Office of Basic Energy Science (ES Grant DE-FG02-07ER46352)en_US
dc.description.sponsorshipUnited States. Department of Energy (GrantDE-AC02-05CH11231)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant DMR-1231319)en_US
dc.language.isoen
dc.publisherProceedings of the National Academy of Sciencesen_US
dc.relation.isversionof10.1073/pnas.1900527116en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourcePNASen_US
dc.subjectMultidisciplinaryen_US
dc.titleTopology on a new facet of bismuthen_US
dc.typeArticleen_US
dc.identifier.citationHsu, Chuang-Han et al. "Topology on a new facet of bismuth." Proceedings of the National Academy of Sciences of the United States of America 116 (2019): 13255-13259 © 2019 The Author(s)en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.relation.journalProceedings of the National Academy of Sciences of the United States of Americaen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2020-02-13T13:27:29Z
dspace.date.submission2020-02-13T13:27:31Z
mit.journal.volume116en_US
mit.journal.issue27en_US
mit.licensePUBLISHER_POLICY
mit.metadata.statusComplete


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