High-Q-factor Al [subscript 2]O[subscript 3] micro-trench cavities integrated with silicon nitride waveguides on silicon
Author(s)Su, Zhan; Li, Nanxi; Frankis, Henry C.; Magden, Salih; Adam, Thomas N.; Leake, Gerald; Coolbaugh, Douglas; Bradley, Jonathan D. B.; Watts, Michael; ... Show more Show less
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We report on the design and performance of high-Q integrated optical micro-trench cavities on silicon. The microcavities are co-integrated with silicon nitride bus waveguides and fabricated using wafer-scale silicon-photonics-compatible processing steps. The amorphous aluminum oxide resonator material is deposited via sputtering in a single straightforward post-processing step. We examine the theoretical and experimental optical properties of the aluminum oxide micro-trench cavities for different bend radii, film thicknesses and near-infrared wavelengths and demonstrate experimental Q factors of > 10[superscript 6]. We propose that this high-Q micro-trench cavity design can be applied to incorporate a wide variety of novel microcavity materials, including rare-earth-doped films for microlasers, into wafer-scale silicon photonics platforms.
DepartmentMassachusetts Institute of Technology. Research Laboratory of Electronics; Massachusetts Institute of Technology. Department of Earth, Atmospheric, and Planetary Sciences
The Optical Society
Su, Zhan, et al. “High-Q-Factor Al 2 O 3 Micro-Trench Cavities Integrated with Silicon Nitride Waveguides on Silicon.” Optics Express 26, 9 (April 2018): 11161. © 2018 Optical Society of America
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