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dc.contributor.authorOsterhoudt, Gavin B.
dc.contributor.authorCarelli, Ryan
dc.contributor.authorBurch, Kenneth S.
dc.contributor.authorKatmis, Ferhat
dc.contributor.authorGedik, Nuh
dc.contributor.authorMoodera, Jagadeesh
dc.date.accessioned2020-04-17T20:28:14Z
dc.date.available2020-04-17T20:28:14Z
dc.date.issued2018-07
dc.date.submitted2017-08
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.urihttps://hdl.handle.net/1721.1/124744
dc.description.abstractHeterostructures of topological insulators and ferromagnets offer new opportunities in spintronics and a route to novel anomalous Hall states. In one such structure, EuS/Bi2Se3, a dramatic enhancement of the Curie temperature was recently observed. We performed Raman spectroscopy on a similar set of thin films to investigate the magnetic and lattice excitations. Interfacial strain was monitored through its effects on the Bi2Se3 phonon modes while the magnetic system was probed through the EuS Raman mode. Despite its appearance in bare EuS, the heterostructures lack the corresponding EuS Raman signal. Through numerical calculations we rule out the possibility of Fabry-Perot interference suppressing the mode. Direct measurements of the magnetic system also eliminate room temperature ordering from suppressing the mode. We therefore attribute the absence of a magnetic signal in EuS to a charge transfer with the Bi2Se3. This could provide an additional pathway for manipulating the magnetic, optical, or electronic response of topological heterostructures. ©2018en_US
dc.description.sponsorshipScience and Technological Research Council of Turkey BIDEB 2232 Program (award no. 117C050)en_US
dc.description.sponsorshipNSF (grant no. DMR-1207469)en_US
dc.description.sponsorshipNSF (grant no. DMR1231319)en_US
dc.description.sponsorshipONR (grant no. N00014-16-1-2657)en_US
dc.publisherAmerican Physical Society (APS)en_US
dc.relation.isversionof10.1103/PHYSREVB.98.014308en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleCharge transfer in EuS/Bi2Se3 heterostructures as indicated by the absence of Raman scatteringen_US
dc.title.alternativeCharge transfer in EuS/Bi[subscript 2]Se[subscript 3] heterostructures as indicated by the absence of Raman scatteringen_US
dc.typeArticleen_US
dc.identifier.citationOsterhoudt, Gavin B., et al., "Charge transfer in EuS/Bi2Se3 heterostructures as indicated by the absence of Raman scattering." Physical review B 98 (July 2018): no. 014308 doi 10.1103/PHYSREVB.98.014308 ©2018 Author(s)en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.relation.journalPhysical review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2019-03-26T12:51:50Z
dspace.embargo.termsNen_US
dspace.date.submission2019-04-04T11:15:11Z
mit.journal.volume98en_US
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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