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dc.contributor.authorPan, Ying
dc.contributor.authorZhou, Jiawei
dc.contributor.authorChen, Gang
dc.date.accessioned2020-05-06T16:16:54Z
dc.date.available2020-05-06T16:16:54Z
dc.date.issued2020-04
dc.date.submitted2020-02
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.urihttps://hdl.handle.net/1721.1/125059
dc.description.abstractThe wide application of amorphous materials in solar cells, memristors, and optical sensors has stimulated interest in understanding heat conduction in amorphous systems owing to their thermal management issues. Thermal transport in amorphous materials fundamentally differs from their crystalline counterparts due to the lack of long-range order. Despite great progress in understanding the thermal transport in crystalline materials over the past few decades from both first-principles computations and thermal transport characterizations, details of heat conduction in amorphous systems remain largely unknown. Here, we quantify different types of heat carriers in amorphous silicon using mean free path spectroscopy, with characteristic sizes down to 50 nm. We show that despite its disordered nature, more than half of thermal conductivity is contributed by propagating vibrational waves, which have mean free paths mostly above 100 nm. This provides direct evidence supporting the diversity of heat carriers in amorphous systems; some modes transport heat as propagating waves, while others do not. Our results suggest mean free path spectroscopy is a versatile tool for understanding thermal transport in disordered systems.en_US
dc.description.sponsorshipDARPA (Grant HR0011-16-2-0041)en_US
dc.publisherAmerican Physical Society (APS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/physrevb.101.144203en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleQuantifying thermal transport in amorphous silicon using mean free path spectroscopyen_US
dc.typeArticleen_US
dc.identifier.citationPan, Ying et al. "Quantifying thermal transport in amorphous silicon using mean free path spectroscopy." Physical Review B 101, 14 (April 2020): 144203 © 2020 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.relation.journalAmerican Physical Societyen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.date.submission2020-04-15T19:12:06Z
mit.journal.volume101en_US
mit.journal.issue14en_US
mit.licensePUBLISHER_POLICY
mit.licenseOPEN_ACCESS_POLICY
mit.metadata.statusComplete


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