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dc.contributor.authorChurikova, Alexandra
dc.contributor.authorBono, David C.
dc.contributor.authorNeltner, Brian
dc.contributor.authorWittmann, Angela
dc.contributor.authorScipioni, L.
dc.contributor.authorShepard, A.
dc.contributor.authorNewhouse-Illige, T.
dc.contributor.authorGreer, J.
dc.contributor.authorBeach, Geoffrey Stephen
dc.date.accessioned2020-05-13T12:54:27Z
dc.date.available2020-05-13T12:54:27Z
dc.date.issued2020-01-13
dc.date.submitted2019-12
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.urihttps://hdl.handle.net/1721.1/125203
dc.description.abstractElectrical control of magnetic order in antiferromagnetic insulators (AFIs) using a Pt overlayer as a spin current source has been recently reported, but detecting and understanding the nature of current-induced switching in AFIs remain a challenge. Here, we examine the origin of spin Hall magnetoresistance-like signals measured in a standard Hall bar geometry, which have recently been taken as evidence of current-induced switching of the antiferromagnetic order in Pt/AFI bilayers. We show that transverse voltage signals consistent with both the partial switching and toggle switching of the Néel vector in epitaxial Pt/NiO bilayers on Al2O3 are also present in Pt/Al2O3 in which the AFI is absent. We show that these signals have a thermal origin and arise from (i) transient changes in the current distribution due to nonuniform Joule heating and (ii) irreversible changes due to electromigration at elevated current densities, accompanied by long-term creep. These results suggest that more sophisticated techniques that directly probe the magnetic order are required to reliably exclude transport artifacts and thus infer information about the antiferromagnetic order in such systems. Keywords: Magnetic ordering; Transition metal oxides; Magnetism; Spintronics; Hall effect; Epitaxy; Spin Hall effect; Scanning electron microscopy; Magnetron sputtering; Electromigrationen_US
dc.description.sponsorshipNational Science Foundation. MRSEC Program (Grant DMR-1419807)en_US
dc.language.isoen
dc.publisherAIP Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.5134814en_US
dc.rightsCreative Commons Attribution 4.0 International licenseen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceAmerican Institute of Physics (AIP)en_US
dc.titleNon-magnetic origin of spin Hall magnetoresistance-like signals in Pt films and epitaxial NiO/Pt bilayersen_US
dc.typeArticleen_US
dc.identifier.citationChurikova, A. et al. "Non-magnetic origin of spin Hall magnetoresistance-like signals in Pt films and epitaxial NiO/Pt bilayers." Applied Physics Letters 116, 2 (Jan. 2020): 022410 © 2020 The Author(s).en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2020-03-24T12:22:52Z
dspace.date.submission2020-03-24T12:22:54Z
mit.journal.volume116en_US
mit.journal.issue2en_US
mit.licensePUBLISHER_CC
mit.metadata.statusComplete


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